The FDMS86202 from onsemi is a high-performance N-channel MOSFET utilizing PowerTrench® technology, designed for efficient power management in demanding applications. With a drain-to-source voltage (Vdss) of 120V and a continuous drain current (Id) of 13.5A, this MOSFET delivers robust performance in a compact POWER56 surface-mount package. Its low on-resistance (Rds(on)) of 7.2mΩ at 10V Vgs ensures minimal conduction losses, making it ideal for high-efficiency power conversion. The device is RoHS3 compliant, REACH unaffected, and rated for MSL 1 (unlimited) storage, ensuring reliability in industrial and automotive environments.
The FDMS86202 excels in:
The FDMS86202 combines onsemi's PowerTrench® technology with superior thermal and electrical characteristics, making it a standout choice for high-efficiency, high-power applications. Its low conduction losses, high current rating, and compact form factor provide a competitive edge over similar MOSFETs, particularly in automotive, industrial, and power supply designs. Engineers seeking a reliable, high-performance MOSFET for demanding environments will find the FDMS86202 an optimal solution.
Download datasheets and manufacturer documentation for FDMS86202