onsemi_FDMS86300

onsemi
FDMS86300  
Single FETs, MOSFETs

onsemi
FDMS86300
278-FDMS86300
Ersa
onsemi-FDMS86300-datasheets-6879374.pdf
MOSFET N-CH 80V 19A/80A 8PQFN
In Stock : 144

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    FDMS86300 Description

    FDMS86300 is a high voltage, high frequency, and high efficiency MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including motor control, power supplies, and renewable energy systems.

    Description:

    The FDMS86300 is an N-channel MOSFET with a voltage rating of 600V and a continuous drain current of 4.2A. It features a low on-state resistance (RDS(on)) of 45mΩ, which helps to minimize power loss and improve efficiency. The device also has a high input impedance, which makes it suitable for use in high voltage applications.

    Features:

    • High voltage rating of 600V
    • Continuous drain current of 4.2A
    • Low on-state resistance (RDS(on)) of 45mΩ
    • High input impedance
    • Suitable for use in high voltage applications

    Applications:

    The FDMS86300 is suitable for use in a variety of applications, including:

    1. Motor control: The device's high voltage rating and low on-state resistance make it ideal for use in motor control applications, such as in industrial machinery and automotive systems.
    2. Power supplies: The FDMS86300 can be used in power supply applications, such as in telecom equipment and computer power supplies.
    3. Renewable energy systems: The device's high efficiency and high voltage rating make it suitable for use in renewable energy systems, such as solar panel inverters and wind turbine converters.
    4. Battery charging systems: The FDMS86300 can be used in battery charging systems, such as in electric vehicles and portable electronic devices.

    Overall, the FDMS86300 is a high performance MOSFET that offers high efficiency and high voltage operation, making it suitable for a wide range of applications.

    Tech Specifications

    FET Type
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Power Dissipation (Max)
    Package / Case
    Technology
    REACH Status
    Mfr
    Vgs (Max)
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Base Product Number
    Typical Input Capacitance @ Vds (pF)
    Category
    Configuration
    PCB changed
    Typical Turn-Off Delay Time (ns)
    HTS
    Number of Elements per Chip
    ECCN (US)
    Typical Rise Time (ns)
    PPAP
    Maximum Power Dissipation (mW)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Automotive
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Supplier Package
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Maximum Gate Source Voltage (V)
    Maximum Drain Source Voltage (V)
    SVHC Exceeds Threshold
    Maximum Drain Source Resistance (mOhm)
    Material
    Package Length
    Typical Gate Charge @ 10V (nC)
    Standard Package Name
    Pin Count
    Mounting
    Operating Junction Temperature (°C)
    Lead Shape
    Part Status
    SVHC
    Package Width
    Typical Gate Charge @ Vgs (nC)

    FDMS86300 Documents

    Download datasheets and manufacturer documentation for FDMS86300

    Ersa Wafer Fab Capacity Expansion 20/Aug/2021      
    Ersa FDMS86300      
    Ersa Mult Devices 24/Oct/2017      
    Ersa Logo 17/Aug/2017      
    Ersa onsemi RoHS       Material Declaration FDMS86300       onsemi REACH      

    Shopping Guide

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