onsemi
FDMS86500L
Single FETs, MOSFETs
FDMS86500L
278-FDMS86500L
onsemi-FDMS86500L-datasheets-6374799.pdf
MOSFET N-CH 60V 25A/80A 8PQFN
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FDMS86500L Description
The FDMS86500L is a high-performance, high-voltage MOSFET from ON Semiconductor. It is designed for use in a wide range of applications, including motor control, power conversion, and power management.
Description:
The FDMS86500L is a N-channel, logic-level MOSFET that features a high input impedance and fast switching capabilities. It is available in a surface-mount package and is designed for use in a wide range of power electronic applications.
Features:
- High voltage rating: The FDMS86500L has a high voltage rating of 100V, making it suitable for use in high-voltage applications.
- Low on-state resistance: The device has a low on-state resistance (RDS(on)), which helps to minimize power dissipation and improve efficiency.
- Fast switching: The FDMS86500L has fast switching capabilities, which makes it suitable for use in high-frequency applications.
- High input impedance: The device has a high input impedance, which allows it to be easily driven by a wide range of control signals.
- Logic-level gate drive: The FDMS86500L features a logic-level gate drive, which allows it to be easily integrated into digital control systems.
Applications:
The FDMS86500L is suitable for use in a wide range of applications, including:
- Motor control: The device can be used in motor control applications, such as brushless DC motor control and stepper motor control.
- Power conversion: The FDMS86500L can be used in power conversion applications, such as AC/DC and DC/DC converters.
- Power management: The device can be used in power management applications, such as battery management systems and power supplies.
- Industrial control: The FDMS86500L can be used in industrial control applications, such as robotics and automation systems.
In summary, the FDMS86500L is a high-performance, high-voltage MOSFET that offers fast switching capabilities and low on-state resistance. It is suitable for use in a wide range of power electronic applications, including motor control, power conversion, and power management.
Tech Specifications
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Supplier Package
Maximum IDSS (uA)
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Standard Package Name
Typical Reverse Recovery Charge (nC)
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Typical Gate to Drain Charge (nC)
SVHC
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Maximum Power Dissipation on PCB @ TC=25°C (W)
Category
Maximum Gate Resistance (Ohm)
PCB changed
HTS
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Typical Drain Source Resistance @ 25°C (mOhm)
Minimum Gate Resistance (Ohm)
Typical Gate Threshold Voltage (V)
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Material
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
FDMS86500L Documents
Download datasheets and manufacturer documentation for FDMS86500L
Wafer Fab Change 28/Sep/2021 FDMS86500L Mult Devices 24/Oct/2017 Black Plastic Reel Update 30/Jun/2015 Logo 17/Aug/2017 FDMS86500L 01/May/2015 onsemi RoHS Material Declaration FDMS86500L onsemi REACH Related Parts
Shopping Guide
Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service
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Information
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