onsemi_FDMT800100DC

onsemi
FDMT800100DC  
Single FETs, MOSFETs

onsemi
FDMT800100DC
278-FDMT800100DC
Ersa
onsemi-FDMT800100DC-datasheets-567369.pdf
MOSFET N-CH 100V 24A/162A 8DUAL
In Stock : 301

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FDMT800100DC Description

FDMT800100DC Description

The FDMT800100DC is a high-performance MOSFET N-CH 100V 24A/162A 8DUAL from onsemi, designed for applications requiring efficient power management and high current handling capabilities. This device features a Dual Cool™, PowerTrench® series, which offers superior thermal performance and reliability. With a maximum drain-to-source voltage of 100V and a continuous drain current of 24A at 25°C (Ta) and 162A at Tc, the FDMT800100DC is well-suited for demanding power electronic applications.

FDMT800100DC Features

  • Technology: MOSFET (Metal Oxide) with a PowerTrench® structure for enhanced performance.
  • Drain to Source Voltage (Vdss): 100V, suitable for high-voltage applications.
  • Current - Continuous Drain (Id): 24A at 25°C (Ta) and 162A at Tc, providing high current handling capabilities.
  • Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V, ensuring low on-resistance for efficient power dissipation.
  • Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10V, contributing to fast switching performance.
  • Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50V, minimizing capacitive effects and improving switching speed.
  • Vgs (Max): ±20V, providing flexibility in gate voltage requirements.
  • Vgs(th) (Max) @ Id: 4V @ 250µA, ensuring reliable threshold voltage performance.
  • Power Dissipation (Max): 3.2W (Ta) and 156W (Tc), enabling high power dissipation capabilities.
  • Mounting Type: Surface Mount, facilitating easy integration into various electronic systems.
  • Package: Tape & Reel (TR), suitable for automated assembly processes.

FDMT800100DC Applications

The FDMT800100DC is ideal for a wide range of applications where high efficiency, power handling, and thermal performance are critical. Some specific use cases include:

  1. Power Supplies: Due to its high voltage and current ratings, the FDMT800100DC is well-suited for power supply applications, such as switching power supplies and battery chargers.
  2. Motor Control: The device's low on-resistance and high current capabilities make it an excellent choice for motor control applications, including electric vehicles and industrial motor drives.
  3. Renewable Energy Systems: The FDMT800100DC can be used in solar inverters and wind power systems, where high efficiency and reliability are essential.
  4. Industrial Automation: The device's robust performance characteristics make it suitable for industrial automation applications, such as robotics and process control systems.

Conclusion of FDMT800100DC

The FDMT800100DC from onsemi is a high-performance MOSFET designed for demanding power electronic applications. Its unique features, such as the PowerTrench® structure, low on-resistance, and high current handling capabilities, make it an ideal choice for applications requiring efficient power management and high reliability. With its wide range of applications, the FDMT800100DC is a versatile and powerful solution for engineers looking to optimize their designs for performance and efficiency.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Maximum Gate Source Leakage Current (nA)
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Maximum IDSS (uA)
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Maximum Drain Source Resistance (mOhm)
Material
Package Length
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Lead Shape
Part Status
SVHC
Maximum Gate Threshold Voltage (V)
Package Width
Typical Gate Charge @ Vgs (nC)

FDMT800100DC Documents

Download datasheets and manufacturer documentation for FDMT800100DC

Ersa FDMT800100DC      
Ersa Mult Devices 24/Oct/2017       Package Change 21/Apr/2021      
Ersa Logo 17/Aug/2017      
Ersa onsemi RoHS       Material Declaration FDMT800100DC      

Shopping Guide

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