onsemi_FDN306P

onsemi
FDN306P  
Single FETs, MOSFETs

onsemi
FDN306P
278-FDN306P
Ersa
onsemi-FDN306P-datasheets-7996336.pdf
MOSFET P-CH 12V 2.6A SUPERSOT3
In Stock : 41540

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    FDN306P Description

    The FDN306P is a high performance, high voltage N-Channel MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including motor control, power supplies, and high voltage switching.

    Description:

    The FDN306P is a N-Channel Enhancement mode Field Effect Transistor. It is a three-terminal semiconductor device that can be used for high voltage switching applications. The device has a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 4.6A.

    Features:

    • High voltage operation: The FDN306P can handle voltages up to 30V, making it suitable for use in high voltage applications.
    • Low on-state resistance: The device has a low on-state resistance (RDS(on)) of 4.3 milliohms, which minimizes power dissipation and improves efficiency.
    • High switching speed: The FDN306P has a fast switching time of 45 nanoseconds, allowing for high frequency operation.
    • Logic level compatible: The device is compatible with logic level signals, making it easy to interface with digital circuits.
    • Avalanche energy capable: The FDN306P can handle high energy pulses, making it suitable for use in applications that require high surge currents.

    Applications:

    • Motor control: The FDN306P can be used in motor control applications, such as in washing machines, air conditioners, and other appliances.
    • Power supplies: The device can be used in power supply circuits, such as in power adapters and chargers.
    • High voltage switching: The FDN306P can be used in high voltage switching applications, such as in class-D amplifiers and other power electronics.
    • Industrial control: The device can be used in industrial control applications, such as in conveyor systems and robotic arms.

    Overall, the FDN306P is a versatile and high performance MOSFET that is suitable for a wide range of applications. Its high voltage rating, low on-state resistance, and fast switching speed make it an excellent choice for high voltage switching and motor control applications.

    Tech Specifications

    FET Type
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Power Dissipation (Max)
    Package / Case
    Technology
    REACH Status
    Mfr
    Vgs (Max)
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Base Product Number
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Automotive
    Supplier Package
    Maximum IDSS (uA)
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Standard Package Name
    Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Typical Gate to Drain Charge (nC)
    Maximum Drain Source Resistance (MOhm)
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Maximum Power Dissipation on PCB @ TC=25°C (W)
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Typical Gate Threshold Voltage (V)
    Maximum Gate Source Voltage (V)
    Typical Gate Plateau Voltage (V)
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Typical Diode Forward Voltage (V)
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

    FDN306P Documents

    Download datasheets and manufacturer documentation for FDN306P

    Ersa Orderable Part Number Update 23/Nov/2016      
    Ersa Mult Dev 08/Jul/2020      
    Ersa FDN306P Datasheet      
    Ersa Mult Devices 24/Oct/2017       Binary Year Code Marking 15/Jan/2014      
    Ersa Marking Lay-out Implementation 15/Nov/2021       Marking Lay-out Implementation 07/Oct/2022      
    Ersa onsemi RoHS       onsemi REACH       Material Declaration FDN306P      

    Shopping Guide

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    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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