onsemi_FDN339AN

onsemi
FDN339AN  
Single FETs, MOSFETs

onsemi
FDN339AN
278-FDN339AN
Ersa
onsemi-FDN339AN-datasheets-2211586.pdf
MOSFET N-CH 20V 3A SUPERSOT3
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FDN339AN Description

The FDN339AN is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. Here is a brief description of the model, its features, and applications:

Description:

The FDN339AN is an N-channel enhancement mode field-effect transistor (MOSFET) that is designed for high voltage applications. It is a member of the SuperFET family of MOSFETs, which are known for their low on-state resistance and high switching speed.

Features:

  1. High Voltage: The FDN339AN is rated for a maximum drain-source voltage (VDS) of 100V, making it suitable for high voltage applications.
  2. Low On-State Resistance: The device has a low on-state resistance (RDS(on)) of 5.6 milliohms, which helps to minimize power dissipation and improve efficiency.
  3. High Switching Speed: The FDN339AN has a fast switching time, with a typical gate charge (Qg) of 44nC and a gate-source threshold voltage (VGS(th)) of 2V to 4V.
  4. Avalanche Energy Rated: The device is rated for an avalanche energy of 75 joules, which provides protection against high-energy transients.
  5. Built-in Body Diode: The FDN339AN features a built-in body diode for efficient bidirectional current conduction.

Applications:

The FDN339AN is suitable for a wide range of applications that require high voltage and fast switching, including:

  1. Motor Control: The device can be used in motor control applications, such as in industrial machinery and robotics.
  2. Power Supplies: The FDN339AN can be used in power supply applications, such as in switching power supplies and battery chargers.
  3. Automotive Applications: The device is suitable for use in automotive applications, such as in electric vehicle charging systems and power steering systems.
  4. Industrial Control: The FDN339AN can be used in industrial control applications, such as in motor drives and inverter systems.
  5. Renewable Energy Systems: The device can be used in renewable energy systems, such as in solar panel power inverters and wind turbine power converters.

Overall, the FDN339AN is a versatile and high-performance MOSFET that is well-suited for a wide range of high voltage applications. Its low on-state resistance, high switching speed, and built-in body diode make it an excellent choice for applications that require efficient and reliable power switching.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Package Length
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Lead Shape
Part Status
Package Width
Typical Gate Charge @ Vgs (nC)

FDN339AN Documents

Download datasheets and manufacturer documentation for FDN339AN

Shopping Guide

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