The FDN339AN is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. Here is a brief description of the model, its features, and applications:
Description:
The FDN339AN is an N-channel enhancement mode field-effect transistor (MOSFET) that is designed for high voltage applications. It is a member of the SuperFET family of MOSFETs, which are known for their low on-state resistance and high switching speed.
Features:
- High Voltage: The FDN339AN is rated for a maximum drain-source voltage (VDS) of 100V, making it suitable for high voltage applications.
- Low On-State Resistance: The device has a low on-state resistance (RDS(on)) of 5.6 milliohms, which helps to minimize power dissipation and improve efficiency.
- High Switching Speed: The FDN339AN has a fast switching time, with a typical gate charge (Qg) of 44nC and a gate-source threshold voltage (VGS(th)) of 2V to 4V.
- Avalanche Energy Rated: The device is rated for an avalanche energy of 75 joules, which provides protection against high-energy transients.
- Built-in Body Diode: The FDN339AN features a built-in body diode for efficient bidirectional current conduction.
Applications:
The FDN339AN is suitable for a wide range of applications that require high voltage and fast switching, including:
- Motor Control: The device can be used in motor control applications, such as in industrial machinery and robotics.
- Power Supplies: The FDN339AN can be used in power supply applications, such as in switching power supplies and battery chargers.
- Automotive Applications: The device is suitable for use in automotive applications, such as in electric vehicle charging systems and power steering systems.
- Industrial Control: The FDN339AN can be used in industrial control applications, such as in motor drives and inverter systems.
- Renewable Energy Systems: The device can be used in renewable energy systems, such as in solar panel power inverters and wind turbine power converters.
Overall, the FDN339AN is a versatile and high-performance MOSFET that is well-suited for a wide range of high voltage applications. Its low on-state resistance, high switching speed, and built-in body diode make it an excellent choice for applications that require efficient and reliable power switching.
FDN339AN Documents
Download datasheets and manufacturer documentation for FDN339AN