onsemi

FDN352AP  

Single FETs, MOSFETs

FDN352AP Description

The FDN352AP from onsemi is a P-Channel PowerTrench® MOSFET designed for high-efficiency power management in compact, surface-mount applications. With a 30V drain-to-source voltage (Vdss) and 1.3A continuous drain current (Id), it offers robust performance in low-voltage circuits. The device features low on-resistance (Rds(on) of 180mΩ @ 1.3A, 10V) and minimal gate charge (1.9nC @ 4.5V), ensuring reduced switching losses and improved thermal efficiency. Packaged in a SUPERSOT-3 form factor, it is optimized for space-constrained designs while maintaining high power dissipation capability (500mW).

FDN352AP Features

• Low Rds(on): 180mΩ @ 1.3A, 10V for minimized conduction losses.
• Fast Switching: Low gate charge (1.9nC) and input capacitance (150pF) enhance high-frequency performance.
• Wide Vgs Range: Supports ±25V gate-to-source voltage, improving reliability in varied drive conditions.
• PowerTrench® Technology: Delivers superior efficiency and thermal performance compared to standard MOSFETs.
• Compact SUPERSOT-3 Package: Ideal for high-density PCB layouts.
• RoHS3 & REACH Compliant: Meets environmental and regulatory standards.
• MSL 1 (Unlimited): Suitable for extended storage and handling without moisture sensitivity concerns.

FDN352AP Applications

The FDN352AP excels in low-voltage power switching and load management applications, including:

• DC-DC Converters: Efficient power conversion in portable devices.
• Battery Management Systems (BMS): Protection circuits and discharge control.
• Load Switching: Power distribution in IoT and consumer electronics.
• Motor Drivers: Compact motor control in robotics and automation.
• Power Supplies: Secondary-side switching in AC-DC adapters.

Conclusion of FDN352AP

The FDN352AP combines high efficiency, compact packaging, and robust performance, making it an excellent choice for modern power electronics. Its low Rds(on), fast switching, and wide Vgs tolerance provide a competitive edge over conventional P-Channel MOSFETs, particularly in space-sensitive and energy-efficient designs. Whether for portable electronics, power management, or industrial controls, this MOSFET delivers reliability and performance in a miniature footprint.

FDN352AP Documents

Download datasheets and manufacturer documentation for FDN352AP

PCN Assembly/Origin :

FDN352AP Assembly Chgs 9/Dec/2020      

Datasheets :

FDN352AP      

PCN Packaging :

Mult Devices 24/Oct/2017       Binary Year Code Marking 15/Jan/2014      

PCN Design/Specification :

Marking Lay-out Implementation 15/Nov/2021       Marking Lay-out Implementation 07/Oct/2022      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration FDN352AP