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FDN359AN  

Single FETs, MOSFETs

FDN359AN is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronics applications, including motor control, power supplies, and energy management systems.

Description:

The FDN359AN is a high voltage N-channel MOSFET transistor with a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of 4.2A. It has a gate-source voltage (VGS) of -4.5V and a threshold voltage (VTH) of -2.5V. The device has a low on-state resistance (RDS(on)) of 4.5 milliohms, which allows for efficient power switching.

Features:

• High voltage N-channel MOSFET transistor
• Drain-source voltage (VDS) of -30V
• Continuous drain current (ID) of 4.2A
• Gate-source voltage (VGS) of -4.5V
• Threshold voltage (VTH) of -2.5V
• Low on-state resistance (RDS(on)) of 4.5 milliohms
• Suitable for use in a variety of power electronics applications

Applications:

The FDN359AN is commonly used in power electronics applications such as:

• Motor control
• Power supplies
• Energy management systems
• Inverters
• Switch mode power supplies (SMPS)
• Class D audio amplifiers
• Battery management systems
• Industrial control systems

The FDN359AN is available in a TO-220 package, which is a popular choice for power electronics applications due to its ability to dissipate heat effectively. It is also available in other packages such as TO-247 and DPAK.

It is important to note that the FDN359AN is a high voltage device and should be used with proper gate drive and heat sinking to ensure reliable operation. Additionally, it is recommended to consult the datasheet for detailed information on the device's electrical characteristics and operating conditions.

FDN359AN Documents

Download datasheets and manufacturer documentation for FDN359AN