onsemi

FDN360P

The FDN360P is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and switching regulators.

Description:

The FDN360P is an N-channel enhancement mode field effect transistor (FET) with a drain-to-source voltage (VDS) of -55V and a continuous drain current (ID) of 4.2A. It features a low on-state resistance (RDS(on)) of 5.6 mΩ max at ID = 4.2A and a fast switching speed with a typical gate charge (Qg) of 34nC.

Features:

• High voltage, N-channel MOSFET transistor
• VDS of -55V
• ID of 4.2A
• Low on-state resistance (RDS(on)) of 5.6 mΩ max at ID = 4.2A
• Fast switching speed with a typical gate charge (Qg) of 34nC
• Suitable for use in power electronic applications

Applications:

• Motor control
• Power supplies
• Switching regulators
• Class D audio amplifiers
• High voltage switching applications

In summary, the FDN360P is a high voltage N-channel MOSFET transistor that offers low on-state resistance and fast switching speed, making it suitable for use in a variety of power electronic applications.