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FDN8601  

Single FETs, MOSFETs

FDN8601 is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and converters.

Description:

The FDN8601 is an N-channel enhancement mode field effect transistor (FET) with a high voltage rating of 100V and a continuous drain current (Id) of 4.6A. It features a low on-state resistance (RDS(on)) of 4.3mΩ maximum at a gate-to-source voltage (VGS) of 10V, which helps to minimize power dissipation and improve efficiency.

Features:

• High voltage rating of 100V
• Continuous drain current of 4.6A
• Low on-state resistance of 4.3mΩ maximum at VGS = 10V
• Fast switching speed
• High input impedance
• Low gate charge
• Logic level gate drive compatible
• Avalanche energy capable

Applications:

The FDN8601 is suitable for use in a wide range of power electronic applications, including:

• Motor control
• Power supplies
• DC-DC converters
• Class D audio amplifiers
• High voltage switch mode power supplies (SMPS)
• Industrial control systems
• Renewable energy systems

In summary, the FDN8601 is a high voltage N-channel MOSFET transistor that offers high efficiency, fast switching speed, and low on-state resistance, making it an ideal choice for a variety of power electronic applications.

FDN8601 Documents

Download datasheets and manufacturer documentation for FDN8601

PCN Assembly/Origin :

FDN8601/FDN5632Nx/FDN86501LZx 06/Sept/2022      

Datasheets :

FDN8601      

PCN Packaging :

Mult Devices 24/Oct/2017       Binary Year Code Marking 15/Jan/2014      

PCN Design/Specification :

Marking Lay-out Implementation 15/Nov/2021       Marking Lay-out Implementation 07/Oct/2022      

Environmental Information :

onsemi RoHS       Material Declaration FDN8601