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FDN86246

278-FDN86246
PDF Datasheet
N-Channel MOSFET 150V 1.6A 261mR TO-236-3 SMT
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Tech Specifications

Package/Case
TO-236-3
Continuous Drain Current (ID)
1.6A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
261mR
Drain to Source Voltage (Vdss)
150V
Element Configuration
Single
Fall Time
2.9ns
Gate to Source Voltage (Vgs)
20V
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FDN86246 Description

FDN86246 is a high voltage N-channel MOSFET manufactured by ON Semiconductor. It is designed for high voltage applications and offers several features that make it suitable for a wide range of applications.

Description:

The FDN86246 is an N-channel enhancement mode field effect transistor (MOSFET). It is a three-pin device with a source, drain, and gate. The device is designed to operate at high voltages and can handle a maximum drain-to-source voltage (VDS) of 100V.

Features:

  1. High Voltage Operation: The FDN86246 can operate at high voltages, making it suitable for applications that require high voltage switches or drivers.
  2. Low On-Resistance: The device has a low on-state resistance (RDS(on)), which minimizes power dissipation and improves efficiency in high current applications.
  3. High Input Impedance: The high input impedance of the gate allows for easy drive and reduces the power required to turn the device on and off.
  4. Logic Level Gate Drive: The device can be driven by logic level signals, making it easy to interface with digital circuits.
  5. Avalanche Energy Sustaining: The FDN86246 can sustain high levels of energy during avalanche transients, making it suitable for applications that require robust overvoltage protection.

Applications:

The FDN86246 is suitable for a wide range of applications that require high voltage switches or drivers. Some of the key applications include:

  1. Motor Control: The device can be used as a switch or driver in motor control applications, such as in industrial machinery and automotive systems.
  2. Power Supplies: The FDN86246 can be used in power supply circuits, such as in switching power supplies and battery chargers.
  3. Inverters: The device can be used in inverter circuits, such as in renewable energy systems and uninterruptible power supplies (UPS).
  4. Class D Audio Amplifiers: The FDN86246 can be used in Class D audio amplifiers, which are known for their high efficiency and low power consumption.
  5. DC-DC Converters: The device can be used in DC-DC converter circuits, such as in telecom equipment and computer systems.

In summary, the FDN86246 is a high voltage N-channel MOSFET that offers several features, including high voltage operation, low on-resistance, high input impedance, logic level gate drive, and avalanche energy sustaining. It is suitable for a wide range of applications, including motor control, power supplies, inverters, Class D audio amplifiers, and DC-DC converters.

FAQ

What voltage specification is listed for FDN86246?
The listed voltage-related specification for FDN86246 is 150V.
What operating temperature range does FDN86246 support?
What package or case is FDN86246 available in?
Are there related or alternative parts for FDN86246?
Is FDN86246 currently in stock?
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