onsemi

FDN86246  

Single FETs, MOSFETs

FDN86246 is a high voltage N-channel MOSFET manufactured by ON Semiconductor. It is designed for high voltage applications and offers several features that make it suitable for a wide range of applications.

Description:

The FDN86246 is an N-channel enhancement mode field effect transistor (MOSFET). It is a three-pin device with a source, drain, and gate. The device is designed to operate at high voltages and can handle a maximum drain-to-source voltage (VDS) of 100V.

Features:

1. High Voltage Operation: The FDN86246 can operate at high voltages, making it suitable for applications that require high voltage switches or drivers.
2. Low On-Resistance: The device has a low on-state resistance (RDS(on)), which minimizes power dissipation and improves efficiency in high current applications.
3. High Input Impedance: The high input impedance of the gate allows for easy drive and reduces the power required to turn the device on and off.
4. Logic Level Gate Drive: The device can be driven by logic level signals, making it easy to interface with digital circuits.
5. Avalanche Energy Sustaining: The FDN86246 can sustain high levels of energy during avalanche transients, making it suitable for applications that require robust overvoltage protection.

Applications:

The FDN86246 is suitable for a wide range of applications that require high voltage switches or drivers. Some of the key applications include:

1. Motor Control: The device can be used as a switch or driver in motor control applications, such as in industrial machinery and automotive systems.
2. Power Supplies: The FDN86246 can be used in power supply circuits, such as in switching power supplies and battery chargers.
3. Inverters: The device can be used in inverter circuits, such as in renewable energy systems and uninterruptible power supplies (UPS).
4. Class D Audio Amplifiers: The FDN86246 can be used in Class D audio amplifiers, which are known for their high efficiency and low power consumption.
5. DC-DC Converters: The device can be used in DC-DC converter circuits, such as in telecom equipment and computer systems.

In summary, the FDN86246 is a high voltage N-channel MOSFET that offers several features, including high voltage operation, low on-resistance, high input impedance, logic level gate drive, and avalanche energy sustaining. It is suitable for a wide range of applications, including motor control, power supplies, inverters, Class D audio amplifiers, and DC-DC converters.

FDN86246 Documents

Download datasheets and manufacturer documentation for FDN86246

PCN Assembly/Origin :

FDN862yyy 14/Jun/2021      

Datasheets :

FDN86246      

PCN Packaging :

Mult Devices 24/Oct/2017       Binary Year Code Marking 15/Jan/2014      

PCN Design/Specification :

Marking Lay-out Implementation 15/Nov/2021       Marking Lay-out Implementation 07/Oct/2022      

Environmental Information :

onsemi RoHS       Material Declaration FDN86246