onsemi_FDP16AN08A0

onsemi
FDP16AN08A0  
Single FETs, MOSFETs

onsemi
FDP16AN08A0
278-FDP16AN08A0
Ersa
onsemi-FDP16AN08A0-datasheets-7840514.pdf
MOSFET N-CH 75V 9A/58A TO220-3
In Stock : 1395

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FDP16AN08A0 Description

FDP16AN08A0 Description

The FDP16AN08A0 is a high-performance N-Channel MOSFET from onsemi, designed for applications requiring robust power handling and efficient switching. With a drain-source voltage (Vdss) of 75V and a continuous drain current (Id) of 9A at 25°C and 58A at case temperature, this MOSFET is ideal for power electronics applications.

FDP16AN08A0 Features

  • High Power Dissipation: Capable of withstanding up to 135W of power dissipation at case temperature, ensuring reliable operation in demanding environments.
  • Low Rds(on): Offers a maximum Rds(on) of 16mOhm at 58A and 10V Vgs, providing efficient current flow and minimizing power losses.
  • Robust Gate Drive: Features a maximum gate-source voltage (Vgs) of ±20V, ensuring reliable gate control and compatibility with various gate drivers.
  • PowerTrench® Technology: Utilizes onsemi's advanced PowerTrench® technology for improved performance, higher efficiency, and better thermal management.
  • REACH and RoHS Compliance: Compliant with REACH and RoHS3 regulations, ensuring environmental safety and compliance with global standards.

FDP16AN08A0 Applications

The FDP16AN08A0 is well-suited for a variety of power electronics applications, including:

  • Power Supplies: Ideal for use in switch-mode power supplies (SMPS) and other power conversion systems.
  • Motor Controls: Effective in brushless DC motor control applications, providing precise current and voltage regulation.
  • Industrial Automation: Reliable in demanding industrial environments, such as robotic controls and automation systems.
  • Automotive Electronics: Suitable for automotive applications, including electric vehicle (EV) charging systems and power management.

Conclusion of FDP16AN08A0

The FDP16AN08A0 from onsemi is a powerful and efficient N-Channel MOSFET, offering superior performance and reliability in high-power applications. Its unique features, such as low Rds(on), high power dissipation, and advanced PowerTrench® technology, make it an excellent choice for demanding power electronics applications. With compliance to REACH and RoHS3 standards, the FDP16AN08A0 is not only a high-performance solution but also an environmentally responsible choice.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Package Length
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Tab
Lead Shape
Part Status
SVHC
Package Width
Typical Gate Charge @ Vgs (nC)

FDP16AN08A0 Documents

Download datasheets and manufacturer documentation for FDP16AN08A0

Ersa Mult Dev Asembly Chg 7/May/2020      
Ersa FDP16AN08A0 Datasheet      
Ersa Mult Devices 24/Oct/2017      
Ersa TO220B03 Pkg Drawing      
Ersa Logo 17/Aug/2017      
Ersa onsemi RoHS       onsemi REACH       Material Declaration FDP16AN08A0      

Shopping Guide

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