onsemi_FDP8878
original

onsemi
FDP8878

278-FDP8878
PDF Datasheet
Power Field-Effect Transistor

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Tech Specifications

Package/Case
TO-220-3
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
19mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
35.3ns
Gate to Source Voltage (Vgs)
20V
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FDP8878 Description

N-Channel 30 V 40A (Tc) 40.5W (Tc) Through Hole TO-220-3

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