onsemi
FDPF55N06  
Single FETs, MOSFETs

onsemi
FDPF55N06
278-FDPF55N06
Ersa
onsemi-FDPF55N06-datasheets-6107866.pdf
MOSFET N-CH 60V 55A TO220F
In Stock : 9

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FDPF55N06 Description

FDPF55N06 Description

The FDPF55N06 from onsemi is a high-performance N-channel MOSFET designed for power management applications. With a 60V drain-to-source voltage (Vdss) and 55A continuous drain current (Id), it delivers robust performance in demanding circuits. Part of the UniFET™ series, this device features low on-resistance (Rds(on) of 22mOhm @ 27.5A, 10V), ensuring minimal conduction losses and improved efficiency. Its TO-220F package offers excellent thermal dissipation, supporting a maximum power dissipation of 48W (Tc). The MOSFET is RoHS3 compliant and REACH unaffected, making it suitable for environmentally conscious designs.

FDPF55N06 Features

  • Low Rds(on): 22mOhm at 10V gate drive, reducing power losses.
  • High Current Handling: 55A continuous drain current for high-power applications.
  • Fast Switching: Optimized gate charge (Qg: 37nC @ 10V) and input capacitance (Ciss: 1510pF @ 25V) for efficient switching performance.
  • Wide Vgs Range: ±25V gate-to-source voltage tolerance for flexible drive requirements.
  • Robust Thermal Performance: TO-220F package ensures effective heat dissipation.
  • Reliability: MSL Not Applicable and ECCN EAR99 certified for industrial and automotive use.

FDPF55N06 Applications

This MOSFET is ideal for:

  • DC-DC Converters: Efficient power conversion in SMPS and voltage regulators.
  • Motor Control: High-current switching in brushed/brushless motor drives.
  • Automotive Systems: Engine control units (ECUs), LED drivers, and battery management.
  • Industrial Power Supplies: High-efficiency PSUs and inverters.
  • Load Switches: Fast switching for power distribution in embedded systems.

Conclusion of FDPF55N06

The FDPF55N06 stands out for its low on-resistance, high current capability, and thermal efficiency, making it a superior choice for power electronics. Its UniFET™ technology ensures reliability in harsh environments, while the TO-220F package simplifies heatsinking. Whether in automotive, industrial, or consumer electronics, this MOSFET delivers high performance, efficiency, and durability, meeting the demands of modern power systems.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Maximum Gate Source Leakage Current (nA)
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Maximum IDSS (uA)
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Maximum Drain Source Resistance (mOhm)
Package Length
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Tab
Lead Shape
Part Status
SVHC
Maximum Gate Threshold Voltage (V)
Package Width
Typical Gate Charge @ Vgs (nC)

FDPF55N06 Documents

Download datasheets and manufacturer documentation for FDPF55N06

Ersa Assembly and Test Qualification 26/Jul/2023      
Ersa FDP55N06, FDPF55N06      
Ersa Mult Devices 24/Oct/2017       Tape and Box/Reel Barcode Update 07/Aug/2014      
Ersa Logo 17/Aug/2017      
Ersa onsemi RoHS       Material Declaration FDPF55N06      

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