The FFSB20120A-F085 is a high-performance 1200V, 32A Silicon Carbide (SiC) Schottky diode from onsemi, designed for demanding automotive and industrial applications. Leveraging SiC technology, it delivers superior efficiency, thermal performance, and reliability compared to traditional silicon diodes. With zero reverse recovery time (trr = 0 ns) and ultra-low forward voltage drop (1.75V @ 20A), this diode minimizes switching losses and improves system efficiency. Its 1220pF capacitance @ 1V, 100kHz ensures stable high-frequency operation, while the 200 µA reverse leakage current @ 1200V enhances power handling. Packaged in a D2PAK (TO-263) surface-mount format, it is RoHS3 compliant, REACH unaffected, and MSL1-rated, making it suitable for automated assembly.
The FFSB20120A-F085 sets a benchmark for SiC Schottky diodes with its zero recovery time, high voltage/current handling, and automotive-grade reliability. Its low losses and robust thermal performance make it ideal for EVs, renewable energy, and industrial power systems. For engineers seeking efficiency, durability, and compact design, this diode offers a future-proof solution for next-generation power electronics.
Download datasheets and manufacturer documentation for FFSB20120A-F085