The FFSD0665A from onsemi is a high-performance 650V, 11A silicon carbide (SiC) Schottky diode designed for demanding power electronics applications. Leveraging SiC technology, it delivers superior efficiency, thermal performance, and reliability compared to conventional silicon diodes. With zero reverse recovery time (trr = 0 ns) and ultra-low forward voltage (1.75V @ 6A), it minimizes switching losses and improves system efficiency. The diode operates at high temperatures with low reverse leakage current (200 µA @ 650V), making it ideal for high-frequency and high-power circuits. Packaged in a surface-mount DPAK with Tape & Reel (TR) option, it is optimized for automated assembly.
The FFSD0665A sets a benchmark for SiC Schottky diodes, combining zero recovery losses, high voltage tolerance, and thermal robustness. Its surface-mount DPAK package and compliance with RoHS3/REACH make it a versatile choice for modern power electronics. Ideal for high-frequency, high-efficiency systems, it outperforms traditional silicon diodes in efficiency, reliability, and power density. A top-tier solution for renewable energy, EV infrastructure, and industrial automation.
Download datasheets and manufacturer documentation for FFSD0665A