onsemi
FFSD0665A  
Single Diodes

onsemi
FFSD0665A
280-FFSD0665A
Ersa
onsemi-FFSD0665A-datasheets-3853000.pdf
DIODE SIL CARBIDE 650V 11A DPAK
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FFSD0665A Description

FFSD0665A Description

The FFSD0665A from onsemi is a high-performance 650V, 11A silicon carbide (SiC) Schottky diode designed for demanding power electronics applications. Leveraging SiC technology, it delivers superior efficiency, thermal performance, and reliability compared to conventional silicon diodes. With zero reverse recovery time (trr = 0 ns) and ultra-low forward voltage (1.75V @ 6A), it minimizes switching losses and improves system efficiency. The diode operates at high temperatures with low reverse leakage current (200 µA @ 650V), making it ideal for high-frequency and high-power circuits. Packaged in a surface-mount DPAK with Tape & Reel (TR) option, it is optimized for automated assembly.

FFSD0665A Features

  • Zero Recovery Time: Eliminates reverse recovery losses, enhancing efficiency in high-frequency applications.
  • High Voltage & Current Rating: 650V DC reverse voltage and 11A average rectified current support robust power handling.
  • Low Forward Voltage Drop: 1.75V @ 6A reduces conduction losses.
  • SiC Technology: Superior thermal conductivity and high-temperature stability vs. silicon diodes.
  • RoHS3 & REACH Compliant: Meets environmental regulations.
  • MSL 1 (Unlimited): Suitable for extended storage without moisture sensitivity concerns.

FFSD0665A Applications

  • Power Supplies: PFC (Power Factor Correction), SMPS (Switched-Mode Power Supplies).
  • Renewable Energy: Solar inverters, wind turbine converters.
  • EV Charging: Fast-charging systems, onboard chargers.
  • Industrial Motor Drives: High-efficiency inverters for motor control.
  • Telecom & Data Centers: High-density power distribution.

Conclusion of FFSD0665A

The FFSD0665A sets a benchmark for SiC Schottky diodes, combining zero recovery losses, high voltage tolerance, and thermal robustness. Its surface-mount DPAK package and compliance with RoHS3/REACH make it a versatile choice for modern power electronics. Ideal for high-frequency, high-efficiency systems, it outperforms traditional silicon diodes in efficiency, reliability, and power density. A top-tier solution for renewable energy, EV infrastructure, and industrial automation.

Tech Specifications

Configuration
PPAP
Product Status
Automotive
Supplier Package
Package / Case
Peak Forward Voltage (V)
Technology
REACH Status
Voltage - DC Reverse (Vr) (Max)
Peak Non-Repetitive Surge Current (A)
EU RoHS
Maximum Continuous Forward Current (A)
Current - Average Rectified (Io)
Operating Temperature - Junction
Moisture Sensitivity Level (MSL)
Capacitance @ Vr, F
ECCN
Mounting Type
Standard Package Name
Current - Reverse Leakage @ Vr
Pin Count
Mounting
Lead Shape
SVHC
HTSUS
Package
Reverse Recovery Time (trr)
PCB changed
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Speed
SVHC Exceeds Threshold
Peak Reverse Current (uA)
Peak Reverse Repetitive Voltage (V)
Material
Package Length
Series
Type
Tab
Voltage - Forward (Vf) (Max) @ If
Part Status
Package Width
Base Product Number
Mounting Style
Vrrm - Repetitive Reverse Voltage
Product
Ir - Reverse Current
RoHS
Minimum Operating Temperature
Tradename
Vf - Forward Voltage
Ifsm - Forward Surge Current
Vr - Reverse Voltage
Maximum Operating Temperature
If - Forward Current
Pd - Power Dissipation
USHTS

FFSD0665A Documents

Download datasheets and manufacturer documentation for FFSD0665A

Ersa Mult PN Mold/Source 01/Dec/2023      
Ersa FFSD0665A      
Ersa FFSD0665A      
Ersa Sida-Diode Datasheet 21/Dec/2023       Datasheet for PTI SIDA devices 21/Sep/2023      
Ersa onsemi RoHS       Material Declaration FFSD0665A      

Shopping Guide

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