onsemi_FQA10N80_F109
original

onsemi
FQA10N80_F109

278-FQA10N80_F109
PDF Datasheet
MOSFET N-CH 800V 9.8A TO-3P

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Tech Specifications

Continuous Drain Current (ID)
9.8A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.05R
Drain to Source Voltage (Vdss)
800V
Fall Time
75ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2.7nF
Max Operating Temperature
150°C
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FQA10N80_F109 Description

N-Channel 800 V 9.8A (Tc) 240W (Tc) Through Hole TO-3P

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