onsemi_FQD2N80TM_WS
original

onsemi
FQD2N80TM_WS

278-FQD2N80TM_WS
MOSFET N-CH 800V 1.8A DPAK

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Tech Specifications

Package/Case
TO-252-3
Continuous Drain Current (ID)
1.8A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
6.3R
Drain to Source Voltage (Vdss)
800V
Fall Time
28ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
550pF
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FQD2N80TM_WS Description

N-Channel 800 V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

FAQ

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