onsemi_FQB22P10TM
original

onsemi
FQB22P10TM

278-FQB22P10TM
PDF Datasheet
P-Channel MOSFET -100V, -22A, 125mR, D2PAK, SMT
11 Weeks

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Tech Specifications

Package/Case
D2PAK
Continuous Drain Current (ID)
22A
Current Rating
-22A
Drain to Source Breakdown Voltage
-100V
Drain to Source Resistance
125mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
125mR
Dual Supply Voltage
100V
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FQB22P10TM Description

FQB22P10TM Description

The FQB22P10TM is a high-performance MOSFET P-CH 100V 22A D2PAK from onsemi, designed for applications requiring high power and efficiency. With a maximum drain-source voltage of 100V and a continuous drain current of 22A at 25°C, this device delivers exceptional performance in demanding electronic systems. The FQB22P10TM features a low on-resistance of 125mOhm at 11A and 10V, ensuring minimal power loss and high efficiency. The device is also designed for easy surface mount installation, making it ideal for compact and space-constrained applications.

FQB22P10TM Features

  • Technology: MOSFET (Metal Oxide) - Providing high efficiency and reliability in power management applications.
  • Input Capacitance (Ciss): 1500 pF @ 25 V - Minimizing input capacitance for faster switching speeds.
  • Gate Charge (Qg): 50 nC @ 10 V - Reducing charge losses and improving efficiency.
  • Drain to Source Voltage (Vdss): 100 V - Suitable for high-voltage applications.
  • Power Dissipation: 3.75W (Ta), 125W (Tc) - Capable of handling high power dissipation in various thermal conditions.
  • Rds On (Max): 125mOhm @ 11A, 10V - Ensuring low on-resistance for high efficiency.
  • Vgs(th) (Max): 4V @ 250µA - Providing stable and reliable gate threshold voltage.
  • Series: QFET® - Known for their high performance and reliability in power management applications.
  • Mounting Type: Surface Mount - Ideal for compact and space-constrained applications.

FQB22P10TM Applications

The FQB22P10TM is ideal for a wide range of high-power applications, including:

  1. Power Management Systems: Due to its high voltage and current ratings, the FQB22P10TM is well-suited for power management systems in various electronic devices.
  2. Automotive Electronics: The device's high power dissipation and reliability make it ideal for automotive electronics, such as power windows, seat controls, and lighting systems.
  3. Industrial Control Systems: The FQB22P10TM can be used in industrial control systems, where high power and reliability are critical.
  4. Telecommunications Equipment: The device's high efficiency and low on-resistance make it suitable for power management in telecommunications equipment.

Conclusion of FQB22P10TM

The FQB22P10TM from onsemi is a high-performance MOSFET P-CH 100V 22A D2PAK that offers exceptional performance, reliability, and efficiency in high-power applications. Its unique features, such as low on-resistance, high voltage and current ratings, and surface mount design, make it an ideal choice for power management systems, automotive electronics, industrial control systems, and telecommunications equipment. With its robust performance and versatility, the FQB22P10TM is a valuable addition to any high-power electronic design.

FAQ

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The standard lead time for FQB22P10TM is 11 Weeks.
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