onsemi_FQB55N10TM
original

onsemi
FQB55N10TM

278-FQB55N10TM
PDF Datasheet
N-Channel Power MOSFET, 100V, 55A, 26mR, D2PAK
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Tech Specifications

Package/Case
D2PAK
Continuous Drain Current (ID)
55A
Current Rating
55A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
26mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
26mR
Element Configuration
Single
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FQB55N10TM Description

The FQB55N10TM is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in high voltage applications and offers several features that make it suitable for a wide range of applications.

Description:

The FQB55N10TM is an N-channel enhancement mode field effect transistor. It is a three-pin device with a source, drain, and gate. The device is designed to operate at high voltages and has a maximum drain-source voltage (VDS) of 1000V.

Features:

  1. High voltage operation: The FQB55N10TM can operate at high voltages, making it suitable for use in applications that require high voltage switches or drivers.
  2. Low on-state resistance (RDS(on)): The device has a low on-state resistance, which helps to minimize power dissipation and improve efficiency.
  3. Fast switching: The FQB55N10TM has fast switching characteristics, making it suitable for use in applications that require high-speed switching.
  4. High input impedance: The device has a high input impedance, which makes it easy to drive with a low voltage control signal.

Applications:

The FQB55N10TM is suitable for use in a wide range of applications that require high voltage switches or drivers. Some common applications include:

  1. Motor control: The FQB55N10TM can be used as a switch or driver in motor control applications, such as in industrial machinery or automotive systems.
  2. Power supplies: The device can be used in power supply circuits to switch high voltage loads.
  3. Renewable energy systems: The FQB55N10TM can be used in renewable energy systems, such as solar panels or wind turbines, to switch high voltage loads.
  4. Battery management systems: The device can be used in battery management systems to switch high voltage batteries.

Overall, the FQB55N10TM is a versatile high voltage N-channel MOSFET transistor that offers several features that make it suitable for use in a wide range of applications. Its high voltage operation, low on-state resistance, fast switching, and high input impedance make it an excellent choice for applications that require high voltage switches or drivers.

FAQ

What package or case is FQB55N10TM available in?
FQB55N10TM is available in the D2PAK package / case.
What is the mounting type of FQB55N10TM?
Are there related or alternative parts for FQB55N10TM?
What is FQB55N10TM?
What operating temperature range does FQB55N10TM support?
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