onsemi

FQD2N80TM

The FQD2N80TM is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and converters.

Description:

The FQD2N80TM is a high voltage N-channel MOSFET transistor that features a drain-source voltage (VDS) of 800V and a continuous drain current (ID) of 2A. It is available in a TO-220 package, which is a popular choice for power electronic applications due to its ruggedness and ease of use.

Features:

• High voltage N-channel MOSFET transistor
• Drain-source voltage (VDS) of 800V
• Continuous drain current (ID) of 2A
• TO-220 package
• Low on-state resistance (RDS(on))
• Fast switching characteristics
• High input impedance
• Low gate charge
• Suitable for use in a wide range of power electronic applications

Applications:

The FQD2N80TM is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Converters
• Inverters
• Battery management systems
• Industrial control systems
• Automotive applications

In summary, the FQD2N80TM is a high voltage N-channel MOSFET transistor that is designed for use in a variety of power electronic applications. Its high drain-source voltage and continuous drain current make it well-suited for use in demanding applications, while its low on-state resistance and fast switching characteristics make it an efficient choice for power conversion and control.