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FQD5P20TM

FQD5P20TM is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in high voltage applications, such as power switching and motor control.

Description:

The FQD5P20TM is a high voltage N-channel MOSFET transistor with a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of 5.4A. It has a low on-state resistance (RDS(on)) of 4.5 mOhm max, which helps to minimize power dissipation and improve efficiency. The device also has a fast switching speed, with a typical gate charge (Qg) of 34nC.

Features:

• High voltage operation: VDS of -20V
• High current capability: ID of 5.4A
• Low on-state resistance: RDS(on) of 4.5 mOhm max
• Fast switching speed: Qg of 34nC
• Logic level gate compatible
• Avalanche energy capable
• Industrial and automotive qualified

Applications:

The FQD5P20TM is suitable for a wide range of applications that require high voltage and high current handling capabilities. Some of the key applications include:

1. Power switching in industrial and automotive systems
2. Motor control in industrial and automotive applications
3. Battery protection circuits in electric vehicles and energy storage systems
4. High voltage DC-DC converters
5. Inverters for renewable energy systems
6. Power supplies for industrial and consumer electronics

In summary, the FQD5P20TM is a high performance N-channel MOSFET transistor that offers high voltage and high current handling capabilities, low on-state resistance, and fast switching speed. It is suitable for use in a variety of high voltage applications, including power switching, motor control, battery protection, and renewable energy systems.