onsemi_FQP3N80C
original

onsemi
FQP3N80C

278-FQP3N80C
PDF Datasheet
800V N-Channel Power MOSFET, 3A, 4.8 Ohm, TO-220

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Tech Specifications

Package/Case
TO-220
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
4.8R
Drain to Source Voltage (Vdss)
800V
Dual Supply Voltage
800V
Element Configuration
Single
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FQP3N80C Description

FQP3N80C Description

The FQP3N80C is a high-performance, single N-Channel MOSFET designed and manufactured by onsemi. This device features a drain-to-source voltage (Vdss) of 800V and can handle a continuous drain current (Id) of 3A at 25°C. With a maximum power dissipation of 107W (Tc), the FQP3N80C is well-suited for applications requiring high voltage and current capabilities. The device is packaged in a through-hole TO220-3 package, making it ideal for various power electronics applications.

FQP3N80C Features

  • High Voltage and Current Capabilities: The FQP3N80C boasts a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 3A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: The device has a maximum on-resistance (Rds On) of 4.8Ω at 1.5A and 10V, ensuring efficient power transfer and minimal power loss.
  • Low Gate Charge: The FQP3N80C has a maximum gate charge (Qg) of 16.5nC at 10V, reducing switching losses and improving overall efficiency.
  • Robust Input Capacitance: The device offers a maximum input capacitance (Ciss) of 705pF at 25V, providing fast response times and improved performance.
  • Compliance with Industry Standards: The FQP3N80C is compliant with the REACH regulation, making it suitable for use in various electronic products.
  • Obsolete Status: It is important to note that the FQP3N80C is now considered obsolete, which may affect its availability and long-term support.

FQP3N80C Applications

The FQP3N80C is ideal for a variety of high-voltage and high-current applications, including:

  1. Power Supplies: The device's high voltage and current capabilities make it suitable for use in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  2. Motor Control: The FQP3N80C can be used in motor control applications, such as electric vehicle (EV) motor drives and industrial motor control systems.
  3. Industrial Automation: The device's robust performance characteristics make it suitable for use in industrial automation systems, such as robotic arms and conveyor systems.
  4. RF Power Amplifiers: The FQP3N80C can be used in RF power amplifiers for telecommunications and broadcasting applications.

Conclusion of FQP3N80C

The FQP3N80C is a high-performance, single N-Channel MOSFET that offers excellent voltage and current handling capabilities. Its low on-resistance, low gate charge, and robust input capacitance make it an ideal choice for high-power applications. However, its obsolete status may limit its availability and long-term support. Despite this, the FQP3N80C remains a reliable and efficient solution for various power electronics applications, including power supplies, motor control, industrial automation, and RF power amplifiers.

FAQ

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FQP3N80C is available in the TO-220 package / case.
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