onsemi

FQPF6N80C  

Single FETs, MOSFETs

The FQPF6N80C is a high voltage N-channel power MOSFET offered by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The FQPF6N80C is a surface-mount MOSFET with a drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 8.0A. It has a low on-state resistance (Rds(on)) of 4.5 milliohms maximum, which helps to minimize power dissipation and improve efficiency.

Features:

• High voltage N-channel power MOSFET
• Drain-source voltage (Vds) of 600V
• Continuous drain current (Id) of 8.0A
• Low on-state resistance (Rds(on)) of 4.5 milliohms maximum
• Surface-mount package
• Suitable for use in a wide range of power electronic applications

Applications:

• Motor control
• Power supplies
• Energy management systems
• Industrial control
• Automotive electronics
• Telecommunications equipment
• Switching regulators

Overall, the FQPF6N80C is a versatile and high-performance MOSFET that is well-suited for use in a variety of power electronic applications. Its high voltage rating and low on-state resistance make it an excellent choice for applications that require efficient and reliable power switching.

FQPF6N80C Documents

Download datasheets and manufacturer documentation for FQPF6N80C

PCN Assembly/Origin :

Assembly/Test 17/Nov/2023      

Datasheets :

FQP(F)6N80C      

PCN Packaging :

Mult Devices 24/Oct/2017       Tape and Box/Reel Barcode Update 07/Aug/2014      

PCN Obsolescence/ EOL :

Mult Dev EOL 30/Mar/2023      

HTML Datasheet :

FQP(F)6N80C      

PCN Design/Specification :

Logo 17/Aug/2017       Passivation Material 26/June/2007      

Environmental Information :

onsemi RoHS       Material Declaration FQPF6N80C