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FQPF6N80C
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Tech Specifications
FQPF6N80C Description
The FQPF6N80C is a high voltage N-channel power MOSFET offered by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.
Description:
The FQPF6N80C is a surface-mount MOSFET with a drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 8.0A. It has a low on-state resistance (Rds(on)) of 4.5 milliohms maximum, which helps to minimize power dissipation and improve efficiency.
Features:
- High voltage N-channel power MOSFET
- Drain-source voltage (Vds) of 600V
- Continuous drain current (Id) of 8.0A
- Low on-state resistance (Rds(on)) of 4.5 milliohms maximum
- Surface-mount package
- Suitable for use in a wide range of power electronic applications
Applications:
- Motor control
- Power supplies
- Energy management systems
- Industrial control
- Automotive electronics
- Telecommunications equipment
- Switching regulators
Overall, the FQPF6N80C is a versatile and high-performance MOSFET that is well-suited for use in a variety of power electronic applications. Its high voltage rating and low on-state resistance make it an excellent choice for applications that require efficient and reliable power switching.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $1.52057 | $15.21 |
| 50+ | $1.42628 | $71.31 |
| 100+ | $1.33028 | $133.03 |
| 500+ | $1.28743 | $643.72 |
| 1000+ | $1.26857 | $1268.57 |
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