onsemi

FQPF9N50CF

FQPF9N50CF Description

The FQPF9N50CF from onsemi is a N-channel 500V MOSFET housed in a TO-220F package, designed for high-voltage switching applications. Part of the FRFET® series, it features a low on-resistance (Rds(on)) of 850mΩ at 10V gate drive and a continuous drain current (Id) of 9A (at Tc=25°C). With an input capacitance (Ciss) of 1030pF and gate charge (Qg) of 35nC, it offers efficient switching performance. The device is RoHS3 compliant and REACH unaffected, making it suitable for environmentally conscious designs.

FQPF9N50CF Features

• High Voltage Rating: 500V Vdss ensures reliability in demanding power applications.
• Low Gate Charge (Qg): 35nC @ 10V minimizes switching losses, improving efficiency.
• Optimized Rds(on): 850mΩ @ 10V, 4.5A reduces conduction losses.
• Robust Construction: TO-220F package provides excellent thermal performance.
• Wide Vgs Range: ±30V gate voltage tolerance enhances flexibility in drive circuits.
• Obsolete Status: While no longer in production, it remains a viable choice for legacy designs.

FQPF9N50CF Applications

• Switching Power Supplies: High-voltage DC-DC converters and offline SMPS.
• Motor Control: Efficient driving of inductive loads in industrial systems.
• Lighting Solutions: LED drivers and ballast control circuits.
• Energy Management: Inverters and power factor correction (PFC) stages.
• Industrial Automation: Relay replacements and high-side switches.

Conclusion of FQPF9N50CF

The FQPF9N50CF is a high-performance N-channel MOSFET optimized for high-voltage, medium-current applications. Its low Rds(on) and gate charge make it ideal for energy-efficient switching, while its rugged TO-220F package ensures thermal stability. Although marked as obsolete, it remains a reliable choice for existing designs requiring 500V capability. Engineers should evaluate alternative FRFET® series components for new projects while leveraging this model for legacy system maintenance.