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H11L1SR2M  

Logic Output Optoisolators

The H11L1SR2M is a high-performance, single-channel, high and low side gate driver from ON Semiconductor. It is designed to drive power MOSFETs, IGBTs, and other power switches in a variety of applications.

Description:

The H11L1SR2M is a monolithic integrated circuit that provides high-side and low-side gate drive for power switches. It features a high-voltage capability of up to 60V and can handle peak currents of up to ±1.5A. The device includes built-in protection features such as over-voltage, under-voltage, and over-temperature protection.

Features:

1. High-voltage capability: The H11L1SR2M can operate with supply voltages up to 60V, making it suitable for a wide range of applications.
2. High current capability: The device can handle peak currents of up to ±1.5A, allowing it to drive power switches with high current requirements.
3. Integrated protection features: The H11L1SR2M includes built-in protection features such as over-voltage, under-voltage, and over-temperature protection to ensure reliable operation.
4. Small package size: The device is available in a compact SOIC-8 package, making it easy to integrate into a variety of applications.

Applications:

The H11L1SR2M is suitable for a wide range of applications that require high-voltage and high-current gate drive, including:

1. Motor control: The H11L1SR2M can be used to drive power switches in motor control applications such as brushless DC motors and stepper motors.
2. Power management: The device can be used to drive power switches in power management applications such as battery management systems and power supplies.
3. Renewable energy: The H11L1SR2M can be used to drive power switches in renewable energy applications such as solar inverters and wind turbines.
4. Industrial control: The device can be used to drive power switches in industrial control applications such as motor drives and robotics.

Overall, the H11L1SR2M is a versatile and high-performance gate driver that can be used in a variety of applications requiring high-voltage and high-current gate drive. Its integrated protection features and small package size make it an ideal choice for space-constrained applications.

H11L1SR2M Documents

Download datasheets and manufacturer documentation for H11L1SR2M

PCN Assembly/Origin :

Mult DEV Mold/Die/Mat 18/Dec/2023      

Datasheets :

H11L3SR2M Datasheet      

PCN Packaging :

Mult Devices 24/Oct/2017      

PCN Design/Specification :

Logo 17/Aug/2017       Datasheet Update 11/Jun/2014      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration H11L1SR2M