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HGTP5N120BND

The HGTP5N120BND is a high voltage, high power transistor offered by ON Semiconductor. It is a part of the HEXFET family of power transistors, which are known for their high performance and reliability.

Description:

The HGTP5N120BND is a 5th generation HEXFET power transistor that features a 1200V blocking voltage and a continuous current rating of 37A. It is available in a TO-220AB package, which is suitable for a wide range of power conversion applications.

Features:

• 1200V blocking voltage
• 37A continuous current rating
• Low on-state resistance (RDS(on))
• High switching speed
• Low gate charge
• High temperature operation (up to 175°C)
• RoHS compliant

Applications:

The HGTP5N120BND is suitable for a wide range of power conversion applications, including:

• Motor control
• Power supplies
• Inverters
• UPS systems
• Renewable energy systems
• Welding equipment

In addition to its high performance and reliability, the HGTP5N120BND also offers excellent thermal performance, thanks to its direct copper bond technology. This makes it an ideal choice for high power applications where thermal management is critical.

Overall, the HGTP5N120BND is a high performance, high power transistor that offers excellent performance and reliability for a wide range of power conversion applications. Its high blocking voltage, low on-state resistance, and high switching speed make it an ideal choice for demanding power conversion applications.