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Tech Specifications
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
200mV
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
2N5551ZL1G Description
Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)
FAQ
What is 2N5551ZL1G?
2N5551ZL1G is a Single Bipolar Transistors from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
Is 2N5551ZL1G currently in stock?
What voltage specification is listed for 2N5551ZL1G?
What package or case is 2N5551ZL1G available in?
Are there related or alternative parts for 2N5551ZL1G?
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