onsemi_MUN5312DW1T1G
original

onsemi
MUN5312DW1T1G

293-MUN5312DW1T1G
PDF Datasheet
50V NPN BRT Transistor, 100mA, SOT-363-6, 2-Ch
6 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
Height
0.9mm
Show More

MUN5312DW1T1G Description

MUN5312DW1T1G Description

The MUN5312DW1T1G is a Bipolar Transistor Array manufactured by onsemi. This pre-biased NPN/PNP SOT363 device is designed for high performance and reliability in various applications. With a maximum collector current of 100mA, it offers excellent current handling capabilities. The device features a low Vce saturation of 250mV at 300µA and 10mA, ensuring efficient operation. The MUN5312DW1T1G is surface mount compatible and comes in a tape and reel packaging for easy integration into automated assembly processes.

MUN5312DW1T1G Features

  • Maximum collector current (Ic) of 100mA
  • Low Vce saturation of 250mV at 300µA and 10mA
  • Surface mount compatible
  • Tape and reel packaging for automated assembly
  • DC current gain (hFE) of 60 at 5mA and 10V
  • Maximum collector-emitter breakdown voltage of 50V
  • Maximum power dissipation of 250mW
  • RoHS3 compliant and REACH unaffected
  • Moisture sensitivity level (MSL) of 1 (unlimited)

MUN5312DW1T1G Applications

The MUN5312DW1T1G is ideal for applications that require high performance and reliability in a compact form factor. Some specific use cases include:

  1. Audio amplifiers and preamplifiers
  2. Power management circuits
  3. Motor control and drive systems
  4. Consumer electronics, such as smartphones and tablets
  5. Industrial control systems

The MUN5312DW1T1G's low Vce saturation and high current handling capabilities make it an excellent choice for applications that demand efficient power management and signal amplification.

Conclusion of MUN5312DW1T1G

The MUN5312DW1T1G is a high-performance Bipolar Transistor Array that offers excellent current handling, low Vce saturation, and reliable operation in a compact SOT363 package. Its unique features, such as the low Vce saturation and high DC current gain, make it an ideal choice for a wide range of applications, including audio amplifiers, power management circuits, and industrial control systems. With its RoHS3 compliance and REACH unaffected status, the MUN5312DW1T1G is a reliable and environmentally friendly solution for your electronic design needs.

FAQ

Is MUN5312DW1T1G currently in stock?
Yes. MUN5312DW1T1G currently shows 14381 unit(s) in stock.
Are there related or alternative parts for MUN5312DW1T1G?
What voltage specification is listed for MUN5312DW1T1G?
What operating temperature range does MUN5312DW1T1G support?
What is MUN5312DW1T1G?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ