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IRFM120ATF

The IRFM120ATF is a high voltage, high frequency, and low RDS(on) N-channel power MOSFET from ON Semiconductor. It is designed for use in a variety of power conversion applications, including motor control, power supplies, and renewable energy systems.

Description:

The IRFM120ATF is a N-channel power MOSFET that features a low RDS(on) of 55 mΩ (maximum) at a gate-source voltage of 10V. It has a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 42A. The device is available in a TO-220 package.

Features:

• Low RDS(on) for high efficiency and low power loss
• High drain-source voltage (VDS) of 100V for use in a wide range of applications
• Continuous drain current (ID) of 42A for high power applications
• N-channel MOSFET for use in high-side switch applications
• Suitable for use in motor control, power supplies, and renewable energy systems

Applications:

• Motor control
• Power supplies
• Renewable energy systems
• High-power switching applications
• Battery management systems

The IRFM120ATF is a high-performance power MOSFET that is suitable for use in a variety of power conversion applications. Its low RDS(on) and high VDS make it an ideal choice for high-efficiency and high-power applications.