onsemi_MJD112RLG

onsemi
MJD112RLG  
Single Bipolar Transistors

onsemi
MJD112RLG
276-MJD112RLG
Ersa
onsemi-MJD112RLG-datasheets-13609161.pdf
TRANS NPN DARL 100V 2A DPAK
In Stock : 13343

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MJD112RLG Description

MJD112RLG Description

The MJD112RLG, manufactured by onsemi, is a high-performance NPN Darlington transistor designed for various applications in the electronics industry. This device offers a range of technical specifications that make it ideal for use in demanding environments. With a 25MHz frequency transition, it provides excellent high-frequency performance. The MJD112RLG can handle a maximum collector current (Ic) of 2A, making it suitable for high-current applications. The Vce saturation (Max) is 3V at 40mA and 4A, ensuring efficient operation under various conditions. The device is surface-mountable, allowing for easy integration into circuit designs.

MJD112RLG Features

  • 25MHz frequency transition for high-frequency performance
  • Maximum collector current (Ic) of 2A for high-current applications
  • Vce saturation (Max) of 3V at 40mA and 4A for efficient operation
  • Surface-mountable for easy integration into circuit designs
  • Maximum collector-emitter breakdown voltage of 100V for reliable operation
  • Maximum power dissipation of 1.75W for handling high power levels
  • DC current gain (hFE) of 1000 at 2A and 3V for excellent amplification
  • Moisture sensitivity level (MSL) of 1 for unlimited storage time

MJD112RLG Applications

The MJD112RLG is ideal for various applications in the electronics industry, including:

  1. Audio and video amplifiers: The high current handling capability and high-frequency performance make it suitable for audio and video amplifiers.
  2. Power switching: The high voltage and current ratings make it ideal for power switching applications.
  3. Motor control: The high current and power ratings make it suitable for motor control applications.
  4. Industrial control systems: The high reliability and performance make it ideal for use in industrial control systems.

Conclusion of MJD112RLG

The MJD112RLG is a high-performance NPN Darlington transistor from onsemi that offers a range of technical specifications and features that make it ideal for various applications in the electronics industry. Its high current and power ratings, high-frequency performance, and reliable operation make it a preferred choice for audio and video amplifiers, power switching, motor control, and industrial control systems. With its unique features and advantages over similar models, the MJD112RLG is a reliable and efficient choice for demanding applications.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
Maximum DC Current Gain
Typical Current Gain Bandwidth (MHz)
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Maximum Collector Cut-Off Current (uA)
Lead Shape
SVHC
HTSUS
Package
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
SVHC Exceeds Threshold
Maximum Base Current (A)
Vce Saturation (Max) @ Ib, Ic
Package Length
Series
Type
Minimum DC Current Gain
Minimum DC Current Gain Range
Operating Junction Temperature (°C)
Tab
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Maximum Continuous DC Collector Current (A)
Base Product Number
Mounting Style
Unit Weight
Maximum Collector Cut-off Current
Transistor Polarity
Continuous Collector Current
RoHS
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Maximum DC Collector Current
Length
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Pd - Power Dissipation
USHTS
Width

MJD112RLG Documents

Download datasheets and manufacturer documentation for MJD112RLG

Ersa Assembly /Test Change 11/Apr/2023      
Ersa MJD112,117      
Ersa MJD112,117      
Ersa onsemi RoHS       onsemi REACH       Material Declaration MJD112RLG      

Shopping Guide

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