onsemi

MJD44H11-1G  

Single Bipolar Transistors

The MJD44H11-1G is a high-voltage, high-power MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including motor control, power supplies, and automotive systems.

Description:

The MJD44H11-1G is an N-channel MOSFET with a drain-source voltage (VDS) of 1100 volts and a continuous drain current (ID) of 44A. It has a gate-source voltage (VGS) range of -1 to +10 volts and a threshold voltage (VTH) range of 3 to 4 volts. The device is available in a TO-220 package.

Features:

• High voltage and current ratings
• Low on-state resistance (RDS(on))
• Fast switching times
• High input impedance
• Avalanche energy capable
• Suitable for use in high-temperature environments

Applications:

• Motor control
• Power supplies
• Automotive systems
• Industrial control
• Switch mode power supplies (SMPS)
• Class D audio amplifiers
• High-voltage switching applications

Overall, the MJD44H11-1G is a versatile MOSFET that can be used in a wide range of power electronic applications. Its high voltage and current ratings, along with its fast switching times and low on-state resistance, make it an excellent choice for demanding power conversion and motor control applications.

MJD44H11-1G Documents

Download datasheets and manufacturer documentation for MJD44H11-1G

PCN Assembly/Origin :

Assembly/Test Site 17/Feb/2023      

Datasheets :

NJVMJD45H11RLG Datasheet      

Environmental Information :

onsemi RoHS       Material Declaration MJD44H11-1G       onsemi REACH