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2N5192G Description
2N5192G Description
The 2N5192G from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for medium-power applications requiring robust switching and amplification capabilities. With a collector-emitter breakdown voltage (VCEO) of 80V and a maximum collector current (IC) of 4A, this transistor is well-suited for demanding circuits. Its low saturation voltage (1.4V @ 1A, 4A) ensures efficient switching, while a transition frequency (fT) of 2MHz supports moderate-speed operations. Packaged in a TO-126 through-hole format, the 2N5192G is RoHS3 compliant and REACH unaffected, making it environmentally friendly and suitable for industrial use.
2N5192G Features
- High Voltage & Current Handling: 80V VCEO and 4A IC for robust performance.
- Low Saturation Voltage: 1.4V @ 4A reduces power dissipation in switching applications.
- Moderate Gain (hFE): Minimum DC current gain of 20 @ 1.5A, 2V ensures reliable amplification.
- Through-Hole TO-126 Package: Easy to mount and ideal for prototyping or production.
- Wide Operating Range: Suitable for industrial, automotive, and power supply applications.
- Compliance: RoHS3, REACH, and EAR99 certified for global use.
2N5192G Applications
The 2N5192G excels in:
- Power Switching: Efficiently drives relays, motors, and solenoids in industrial controls.
- Linear Amplification: Used in audio amplifiers and signal conditioning circuits.
- Voltage Regulation: Ideal for series pass transistors in power supplies.
- Automotive Systems: Suitable for ignition circuits and load drivers due to its rugged design.
- General-Purpose Switching: Reliable performance in inverters, converters, and H-bridge configurations.
Conclusion of 2N5192G
The 2N5192G stands out as a versatile, high-reliability NPN transistor, combining high voltage tolerance, efficient switching, and moderate gain. Its TO-126 package ensures ease of integration, while compliance with environmental standards makes it a sustainable choice. Whether for industrial automation, power management, or automotive systems, this transistor delivers consistent performance under demanding conditions, making it a preferred choice for engineers seeking durability and efficiency.



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