onsemi

MMBT6517LT1G

MMBT6517LT1G Description

The MMBT6517LT1G, manufactured by onsemi, is a single NPN bipolar transistor housed in a compact SOT23-3 package. With a maximum collector-emitter breakdown voltage of 350V and a maximum collector current of 100mA, this device is designed for high-frequency applications requiring robust performance. The MMBT6517LT1G boasts a transition frequency of 200MHz, making it suitable for RF and microwave circuits. It also features a low saturation voltage of 1V at 5mA and 50mA, ensuring efficient operation in low-voltage environments.

MMBT6517LT1G Features

• NPN transistor type for high current gain and low noise
• 200MHz transition frequency for high-speed switching and amplification
• 350V collector-emitter breakdown voltage for reliable operation in high-voltage circuits
• 100mA maximum collector current for driving demanding loads
• Low saturation voltage of 1V at 5mA and 50mA for efficient power management
• 225mW maximum power dissipation for extended operation in high-power applications
• Surface-mount packaging for space-saving integration in compact devices
• DC current gain (hFE) of 20 at 50mA and 10V for consistent performance
• Moisture sensitivity level (MSL) of 1, indicating unlimited storage time before reflow soldering

MMBT6517LT1G Applications

The MMBT6517LT1G is ideal for various applications in the electronics industry, including:

1. RF and microwave circuits requiring high-frequency switching and amplification
2. Low-voltage power management systems, such as battery-operated devices and energy-efficient electronics
3. High-voltage circuits, including automotive and industrial applications, where robust performance is crucial
4. Audio and video amplification circuits, benefiting from the device's low noise and high current gain
5. General-purpose switching and amplification applications in consumer electronics, telecommunications, and computing systems

Conclusion of MMBT6517LT1G

The MMBT6517LT1G is a versatile and high-performance NPN bipolar transistor, offering a unique combination of high-frequency capabilities, high breakdown voltage, and low saturation voltage. Its compact SOT23-3 packaging and surface-mount design make it suitable for integration in a wide range of applications, from RF and microwave circuits to high-voltage power management systems. Despite its obsolescence, the MMBT6517LT1G remains a valuable option for engineers seeking a reliable and efficient solution in demanding electronic designs.