onsemi_MMBT6520LT1G
original

onsemi
MMBT6520LT1G

276-MMBT6520LT1G
PDF Datasheet
PNP BJT Transistor, 350V, 500mA, 200MHz, SOT-23
12 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
350V
Collector Emitter Breakdown Voltage
350V
Collector Emitter Saturation Voltage
-1V
Collector Emitter Voltage (VCEO)
350V
Collector-emitter Voltage-Max
1V
Current Rating
-500mA
Emitter Base Voltage (VEBO)
5V
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MMBT6520LT1G Description

MMBT6520LT1G Description

The MMBT6520LT1G is a high-performance PNP bipolar transistor offered by onsemi. This device is specifically designed for applications requiring high voltage and current capabilities. With a maximum collector-emitter breakdown voltage of 350V and a maximum collector current of 500mA, the MMBT6520LT1G is well-suited for power switching and amplification tasks. Its PNP configuration allows for easy integration into existing designs, providing a reliable and efficient solution for various electronic systems.

MMBT6520LT1G Features

  • High Voltage and Current Ratings: The MMBT6520LT1G boasts a maximum collector-emitter breakdown voltage of 350V and a maximum collector current of 500mA, making it ideal for high-power applications.
  • PNP Configuration: The PNP transistor type allows for easy integration into existing designs, providing a reliable and efficient solution for various electronic systems.
  • Surface Mount Packaging: The MMBT6520LT1G is available in a surface-mount SOT23-3 package, which is compact and easy to install, making it suitable for space-constrained applications.
  • RoHS Compliance: This device is compliant with the RoHS3 directive, ensuring environmental responsibility and compatibility with green electronics manufacturing processes.
  • REACH Unaffected Status: The MMBT6520LT1G is not affected by the REACH regulation, ensuring uninterrupted supply and availability for customers.

MMBT6520LT1G Applications

The MMBT6520LT1G is an ideal choice for various applications due to its high voltage and current ratings, as well as its PNP configuration. Some specific use cases include:

  • Power Switching: The high voltage and current ratings make the MMBT6520LT1G suitable for power switching applications, where high voltage and current handling capabilities are required.
  • Amplification: The device's high-frequency transition capability of 200MHz allows it to be used in amplification circuits, providing efficient signal amplification.
  • Automotive Electronics: The MMBT6520LT1G can be used in automotive electronics, such as power windows, door locks, and other high-voltage applications.
  • Industrial Control Systems: The device's high voltage and current ratings make it suitable for use in industrial control systems, where high power handling is necessary.

Conclusion of MMBT6520LT1G

In conclusion, the MMBT6520LT1G is a versatile and high-performance PNP bipolar transistor that offers excellent voltage and current handling capabilities. Its compact surface-mount packaging and RoHS compliance make it an ideal choice for a wide range of applications, including power switching, amplification, automotive electronics, and industrial control systems. With its unique features and advantages over similar models, the MMBT6520LT1G is a reliable and efficient solution for high-voltage and high-current applications in the electronics industry.

FAQ

Are there related or alternative parts for MMBT6520LT1G?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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