The MJD45H11G is a high-performance, single PNP Bipolar Transistor designed and manufactured by onsemi. This device is known for its exceptional electrical characteristics, making it suitable for a wide range of applications. With a frequency transition of 90MHz, it ensures high-speed operation. The MJD45H11G can handle a maximum collector current (Ic) of 8A, providing ample power for various electronic systems. The Vce saturation (Max) is 1V @ 400mA, 8A, which ensures efficient power management. The device is classified under EAR99 and is compliant with REACH and RoHS3 standards, making it environmentally friendly and suitable for global distribution.
The MJD45H11G is ideal for applications requiring high power and speed, such as:
The MJD45H11G stands out for its high-performance capabilities, making it a top choice for applications demanding high power, speed, and reliability. Its unique features, such as high-frequency transition and efficient power management, coupled with its compliance with environmental standards, position it as a superior option over similar models. Whether used in power amplifiers, switching regulators, automotive electronics, or industrial control systems, the MJD45H11G delivers exceptional performance and value.
Download datasheets and manufacturer documentation for MJD45H11G