onsemi_MJD45H11G

onsemi
MJD45H11G  
Single Bipolar Transistors

onsemi
MJD45H11G
276-MJD45H11G
Ersa
onsemi-MJD45H11G-datasheets-6435805.pdf
TRANS PNP 80V 8A DPAK
In Stock : 12790

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MJD45H11G Description

MJD45H11G Description

The MJD45H11G is a high-performance, single PNP Bipolar Transistor designed and manufactured by onsemi. This device is known for its exceptional electrical characteristics, making it suitable for a wide range of applications. With a frequency transition of 90MHz, it ensures high-speed operation. The MJD45H11G can handle a maximum collector current (Ic) of 8A, providing ample power for various electronic systems. The Vce saturation (Max) is 1V @ 400mA, 8A, which ensures efficient power management. The device is classified under EAR99 and is compliant with REACH and RoHS3 standards, making it environmentally friendly and suitable for global distribution.

MJD45H11G Features

  • High Frequency Transition: The 90MHz frequency transition allows for high-speed operation in various electronic devices.
  • High Collector Current: Capable of handling up to 8A, making it ideal for high-power applications.
  • Efficient Power Management: Vce saturation of 1V @ 400mA, 8A ensures efficient power usage.
  • Environmental Compliance: EAR99 classification, REACH unaffected, and RoHS3 compliant.
  • Surface Mount Technology: Easy integration into modern electronic devices.
  • Robust Voltage Handling: Capable of withstanding a maximum collector-emitter breakdown voltage of 80V.
  • DC Current Gain: A minimum hFE of 40 @ 4A, 1V ensures reliable performance.
  • Low Cutoff Current: A maximum collector cutoff current of 1µA for minimal power leakage.

MJD45H11G Applications

The MJD45H11G is ideal for applications requiring high power and speed, such as:

  • Power Amplifiers: Utilizing its high current and voltage capabilities.
  • Switching Regulators: Benefiting from its high-speed transition and efficient power management.
  • Automotive Electronics: Withstanding the rigors of automotive environments with its robust voltage handling and low power leakage.
  • Industrial Control Systems: Providing reliable performance in demanding industrial settings.

Conclusion of MJD45H11G

The MJD45H11G stands out for its high-performance capabilities, making it a top choice for applications demanding high power, speed, and reliability. Its unique features, such as high-frequency transition and efficient power management, coupled with its compliance with environmental standards, position it as a superior option over similar models. Whether used in power amplifiers, switching regulators, automotive electronics, or industrial control systems, the MJD45H11G delivers exceptional performance and value.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
SVHC
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
SVHC Exceeds Threshold
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Tab
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
Continuous Collector Current
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

MJD45H11G Documents

Download datasheets and manufacturer documentation for MJD45H11G

Ersa Assembly /Test Change 11/Apr/2023      
Ersa NJVMJD45H11RLG Datasheet      
Ersa onsemi RoHS       Material Declaration MJD45H11G       onsemi REACH      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service