onsemi

MJF45H11G  

Single Bipolar Transistors

MJF45H11G Description

The MJF45H11G is a high-performance PNP bipolar transistor designed and manufactured by onsemi. This device offers a robust set of technical specifications, making it an ideal choice for various applications in the electronics industry. With a maximum collector-emitter breakdown voltage of 80V and a maximum collector current of 10A, the MJF45H11G delivers exceptional performance in demanding environments.

MJF45H11G Features

• PNP Transistor Type: Designed for high-power applications, the MJF45H11G offers superior performance and reliability.
• 40MHz Frequency - Transition: This high-frequency capability allows for efficient operation in fast-switching circuits.
• 10A Maximum Collector Current (Ic): The MJF45H11G can handle high currents, making it suitable for power amplification and switching applications.
• 1V Vce Saturation @ 400mA, 8A: This low saturation voltage ensures efficient power management and reduced power loss.
• 2W Maximum Power: The MJF45H11G is capable of handling up to 2 watts of power, making it ideal for high-power applications.
• DC Current Gain (hFE) 40 @ 4A, 1V: This high current gain provides excellent amplification capabilities.
• Through Hole Mounting Type: The through-hole package design ensures easy integration into existing circuit boards.
• ROHS3 Compliant: The MJF45H11G meets stringent environmental standards, making it an eco-friendly choice.

MJF45H11G Applications

The MJF45H11G is ideal for a variety of applications where high power and performance are required. Some specific use cases include:

• Power Amplification: Due to its high current and power ratings, the MJF45H11G is well-suited for power amplifiers in audio systems.
• Switching Applications: The high-frequency transition and low saturation voltage make it an excellent choice for switching applications in power supplies and motor controls.
• Automotive Electronics: The MJF45H11G's robust performance and high power handling capabilities make it suitable for automotive electronics, such as ignition systems and power management.

Conclusion of MJF45H11G

The MJF45H11G from onsemi is a powerful PNP bipolar transistor that offers exceptional performance and reliability in high-power and high-frequency applications. Its unique combination of technical specifications, including a 40MHz frequency transition, 10A maximum collector current, and 2W maximum power, make it an ideal choice for power amplification, switching applications, and automotive electronics. With its ROHS3 compliance and through-hole mounting type, the MJF45H11G is not only a high-performance device but also an environmentally friendly and easy-to-integrate solution.

MJF45H11G Documents

Download datasheets and manufacturer documentation for MJF45H11G

PCN Assembly/Origin :

Mold compound change 17/Apr/2020      

Datasheets :

MJF44H11, MJF45H11      

HTML Datasheet :

MJF44H11, MJF45H11      

Environmental Information :

onsemi RoHS       Material Declaration MJF45H11G