onsemi

MMBT2222ALT1G

The MMBT2222ALT1G is a high-performance NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for use in a wide range of applications, including general-purpose amplification and switching.

Description:

The MMBT2222ALT1G is an NPN transistor that features a plastic package with a lead spacing of 2.54mm. It has a maximum collector current (Ic) of 800mA and a collector-emitter voltage (Vce) of 40V. The transistor also has a low saturation voltage (Vce(sat)) of 1.5V (maximum) at Ic = 800mA and a high current gain (hFE) with a minimum value of 100.

Features:

1. High current gain (hFE) with a minimum value of 100
2. Low saturation voltage (Vce(sat)) of 1.5V (maximum) at Ic = 800mA
3. Maximum collector current (Ic) of 800mA
4. Collector-emitter voltage (Vce) of 40V
5. Plastic package with a lead spacing of 2.54mm

Applications:

1. General-purpose amplification
2. Switching applications
3. Digital circuits
4. Low-power audio amplifiers
5. Motor control circuits
6. Temperature compensation circuits

The MMBT2222ALT1G is a versatile transistor that can be used in a wide range of applications due to its high current gain and low saturation voltage. Its plastic package and lead spacing make it suitable for use in both surface-mount and through-hole applications.