onsemi_MMBT4403M3T5G
original

onsemi
MMBT4403M3T5G

276-MMBT4403M3T5G
PDF Datasheet
PNP Bipolar Transistor, SOT-723 3 LEAD, 8000-REEL
12 Weeks

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Tech Specifications

Package/Case
SOT-723-3
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
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MMBT4403M3T5G Description

MMBT4403M3T5G Description

The MMBT4403M3T5G is a high-performance PNP bipolar transistor designed and manufactured by onsemi. With a maximum collector-emitter voltage of 40V and a maximum collector current of 600mA, this device offers excellent performance in a wide range of applications. The MMBT4403M3T5G features a surface-mount package, making it ideal for use in compact and space-constrained designs. This product is currently active and compliant with RoHS3 regulations, ensuring its suitability for use in environmentally friendly electronics.

MMBT4403M3T5G Features

  • PNP Bipolar Transistor: The MMBT4403M3T5G is a PNP transistor, making it suitable for use in a variety of electronic circuits.
  • 200MHz Frequency - Transition: This device offers a high transition frequency of 200MHz, making it suitable for use in high-speed applications.
  • 600mA Collector Current (Ic) (Max): The MMBT4403M3T5G can handle a maximum collector current of 600mA, providing ample current for most applications.
  • 40V Collector-Emitter Breakdown Voltage (Max): This device can withstand a maximum collector-emitter voltage of 40V, making it suitable for use in high-voltage circuits.
  • 265mW Maximum Power: The MMBT4403M3T5G can handle a maximum power dissipation of 265mW, ensuring reliable operation in demanding applications.
  • Surface Mount Package: This device features a surface-mount package, making it ideal for use in compact and space-constrained designs.
  • RoHS3 Compliance: The MMBT4403M3T5G is compliant with RoHS3 regulations, ensuring its suitability for use in environmentally friendly electronics.

MMBT4403M3T5G Applications

The MMBT4403M3T5G is ideal for use in a wide range of applications, including:

  • Amplifiers: Due to its high current and voltage capabilities, the MMBT4403M3T5G is well-suited for use in amplifier circuits.
  • Switching Applications: The device's high transition frequency and low saturation voltage make it an excellent choice for switching applications.
  • RF Applications: The MMBT4403M3T5G's high frequency capabilities make it suitable for use in RF circuits, such as transmitters and receivers.
  • Automotive Electronics: This device's ability to handle high voltages and currents makes it ideal for use in automotive electronics, such as ignition systems and power management circuits.

Conclusion of MMBT4403M3T5G

The MMBT4403M3T5G is a versatile and high-performance PNP bipolar transistor that offers excellent performance in a wide range of applications. Its high current and voltage capabilities, combined with its high transition frequency and surface-mount package, make it an ideal choice for use in amplifiers, switching applications, RF circuits, and automotive electronics. With its RoHS3 compliance and active product status, the MMBT4403M3T5G is a reliable and environmentally friendly option for your next electronic design.

FAQ

Does MMBT4403M3T5G have quantity-based pricing?
Yes. MMBT4403M3T5G currently has 3 pricing tier(s), starting from 5 units.
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Availability (In Stock : 143 )
Quantity Unit Price Ext. Price
5+ $0.05663 $0.28
50+ $0.05525 $2.76
150+ $0.05436 $8.15
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