onsemi

MMSF3P02HDR2G

MMSF3P02HDR2G Description

The MMSF3P02HDR2G from onsemi is a P-channel MOSFET designed for high-efficiency power management applications. With a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 5.6A, this device offers robust performance in compact surface-mount packages. It features a low on-resistance (Rds(on)) of 75mΩ at 10V gate drive, ensuring minimal power loss and improved thermal management. The MOSFET is housed in an 8-SOIC package, making it suitable for space-constrained designs. Although marked as obsolete, it remains a reliable choice for legacy systems due to its RoHS3 compliance and REACH unaffected status.

MMSF3P02HDR2G Features

• Low Gate Charge (Qg): 46nC @ 10V reduces switching losses, enhancing efficiency in high-frequency applications.
• High Input Capacitance (Ciss): 1400pF @ 16V ensures stable gate control with minimal noise susceptibility.
• Wide Gate-Source Voltage (Vgs) Range: ±20V provides flexibility in drive circuit design.
• Optimized Drive Voltage: 4.5V to 10V for balanced performance in both logic-level and standard gate drive applications.
• Moisture Sensitivity Level (MSL) 1: Suitable for extended storage and handling without stringent humidity controls.
• Surface-Mount Design: Tape & Reel (TR) packaging enables automated assembly processes.

MMSF3P02HDR2G Applications

This MOSFET is ideal for:

• Power Management: DC-DC converters, load switches, and battery protection circuits.
• Portable Electronics: Smartphones, tablets, and wearables requiring compact, efficient power switching.
• Automotive Systems: Low-voltage auxiliary power distribution and motor control modules.
• Industrial Controls: Relay drivers and solenoid actuators benefiting from low Rds(on) and high current handling.

Conclusion of MMSF3P02HDR2G

The MMSF3P02HDR2G delivers a balanced combination of low on-resistance, high current capability, and efficient switching performance, making it a versatile choice for power electronics. While obsolete, its proven reliability, RoHS compliance, and broad voltage tolerance ensure continued suitability for legacy and cost-sensitive designs. Engineers seeking a P-channel MOSFET with robust thermal characteristics for space-constrained applications will find this device a dependable solution.