onsemi_MMUN2231LT1G

onsemi
MMUN2231LT1G  
Single, Pre-Biased Bipolar Transistors

onsemi
MMUN2231LT1G
292-MMUN2231LT1G
Ersa
onsemi-MMUN2231LT1G-datasheets-3322046.pdf
TRANS PREBIAS NPN 50V SOT23-3
In Stock : 20000

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MMUN2231LT1G Description

MMUN2231LT1G Description

The MMUN2231LT1G is a single, pre-biased NPN bipolar transistor offered by ON Semiconductor. This SOT23-3 packaged device is designed to provide high performance in a compact form factor, making it ideal for a variety of applications. With a maximum collector current of 100 mA and a breakdown voltage of 50 V, the MMUN2231LT1G offers robust performance in demanding electronic systems.

MMUN2231LT1G Features

  • Technical Specifications: The MMUN2231LT1G boasts a maximum collector current (Ic) of 100 mA, a saturation voltage (Vce) of 250 mV at 5 mA and 10 mA, and a maximum power dissipation of 246 mW. The device also features a minimum DC current gain (hFE) of 8 at 5 mA and 10 V.
  • Resistors: The MMUN2231LT1G includes built-in resistors, with a base resistor (R1) and emitter-base resistor (R2) both rated at 2.2 kOhms, simplifying the design process and reducing the number of external components required.
  • Mounting Type: Surface mount technology allows for easy integration into a variety of electronic systems.
  • Regulatory Compliance: The MMUN2231LT1G is compliant with the RoHS3 directive, making it suitable for use in environmentally conscious applications.

MMUN2231LT1G Applications

The MMUN2231LT1G's unique combination of performance and compact form factor makes it ideal for a variety of applications, including:

  • Audio Amplifiers: The device's high gain and low distortion characteristics make it well-suited for use in audio amplifier circuits.
  • Switching Applications: The MMUN2231LT1G's ability to handle up to 100 mA of collector current and 50 V of breakdown voltage make it suitable for use in switching applications.
  • RF Applications: The device's low saturation voltage and high gain make it an excellent choice for use in RF circuits, where low noise and high linearity are critical.

Conclusion of MMUN2231LT1G

The MMUN2231LT1G from ON Semiconductor is a high-performance, pre-biased NPN bipolar transistor that offers a unique combination of technical specifications and features. Its compact SOT23-3 package, built-in resistors, and regulatory compliance make it an ideal choice for a wide range of applications, from audio amplifiers to switching and RF circuits. With its robust performance and ease of integration, the MMUN2231LT1G is a valuable addition to any electronic design.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Typical Resistor Ratio
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Current - Collector (Ic) (Max)
Typical Input Resistor (kOhm)
ECCN
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
PCB changed
HTS
Maximum Collector-Emitter Voltage (V)
Resistor - Base (R1)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Continuous DC Collector Current (mA)
Vce Saturation (Max) @ Ib, Ic
Package Length
Series
Type
Minimum DC Current Gain
Minimum DC Current Gain Range
Operating Junction Temperature (°C)
Power - Max
Resistor - Emitter Base (R2)
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Transistor Polarity
Peak DC Collector Current
Continuous Collector Current
RoHS
Minimum Operating Temperature
Length
DC Current Gain hFE Max
Collector- Emitter Voltage VCEO Max
Typical Input Resistor
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Pd - Power Dissipation
USHTS
Width

MMUN2231LT1G Documents

Download datasheets and manufacturer documentation for MMUN2231LT1G

Ersa Mold Compound 02/Apr/2020      
Ersa MUN(2,5)231, MMUN2231L, DC123Exx      
Ersa MUN(2,5)231, MMUN2231L, DC123Exx      
Ersa Glue Mount Process 11/July/2008       SOT23 16/Sep/2016      
Ersa onsemi RoHS       onsemi REACH       Material Declaration MMUN2231LT1G      

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