onsemi

MMUN2238LT1G  

Single, Pre-Biased Bipolar Transistors

MMUN2238LT1G Description

The MMUN2238LT1G is a pre-biased NPN bipolar transistor designed and manufactured by onsemi. This single device is housed in a compact SOT23-3 package, making it suitable for surface mount applications. With a maximum collector current of 100 mA and a breakdown voltage of 50 V, the MMUN2238LT1G offers excellent performance in a wide range of electronic circuits.

MMUN2238LT1G Features

• Technical Specifications: The MMUN2238LT1G boasts a maximum collector current (Ic) of 100 mA, a base resistor (R1) of 2.2 kOhms, and a Vce saturation of 250 mV at 1 mA and 10 mA. It can handle a maximum power dissipation of 246 mW and has a DC current gain (hFE) of at least 160 at 5 mA and 10 V.
• Performance Benefits: This pre-biased transistor offers low saturation voltage and high current gain, making it ideal for applications requiring efficient power amplification and signal processing. Its low moisture sensitivity level (MSL) of 1 ensures reliable performance in various environmental conditions.
• Unique Advantages: Compared to similar models, the MMUN2238LT1G stands out with its combination of high current gain, low saturation voltage, and compact package. This makes it a versatile choice for designers looking for a reliable and efficient pre-biased NPN transistor.

MMUN2238LT1G Applications

The MMUN2238LT1G is well-suited for a variety of applications, including:

1. Audio Amplifiers: Its high current gain and low saturation voltage make it ideal for use in audio amplifiers, where it can provide clear and powerful sound reproduction.
2. Power Management: The MMUN2238LT1G's ability to handle up to 100 mA of collector current and 50 V of breakdown voltage make it suitable for power management circuits in various electronic devices.
3. Signal Processing: Its low saturation voltage and high current gain make it an excellent choice for signal processing applications, where it can amplify and process signals with minimal distortion.

Conclusion of MMUN2238LT1G

In conclusion, the MMUN2238LT1G is a high-performance, pre-biased NPN bipolar transistor that offers a unique combination of technical specifications, performance benefits, and versatility. Its compact SOT23-3 package, low saturation voltage, and high current gain make it an ideal choice for a wide range of applications, including audio amplifiers, power management, and signal processing. With its reliable performance and compliance with RoHS3 standards, the MMUN2238LT1G is a valuable addition to any electronic design.

MMUN2238LT1G Documents

Download datasheets and manufacturer documentation for MMUN2238LT1G

PCN Assembly/Origin :

Mold Compound 02/Apr/2020      

Datasheets :

MUNx238L, MMUN2238L, DTC123T, NSBC123TF3      

HTML Datasheet :

MUNx238L, MMUN2238L, DTC123T, NSBC123TF3      

PCN Design/Specification :

Copper Wire Update 10/Sep/2015       Gold to Copper Wire 14/Oct/2008      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration MMUN2238LT1G