onsemi_MSB1218A-RT1G
original

onsemi
MSB1218A-RT1G

276-MSB1218A-RT1G
PDF Datasheet
PNP Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 3000-REEL
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Tech Specifications

Collector Base Voltage (VCBO)
45V
Collector Emitter Saturation Voltage
500mV
Collector-emitter Voltage-Max
45V
Current Rating
-100mA
Emitter Base Voltage (VEBO)
7V
hFE Min
210
Lead Free
Lead Free
Max Collector Current
100mA
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MSB1218A-RT1G Description

MSB1218A-RT1G Description

The MSB1218A-RT1G is a high-performance PNP single bipolar transistor designed and manufactured by onsemi. This device is known for its excellent electrical characteristics and robust performance, making it suitable for a wide range of applications. With an operating temperature range of 150°C (TJ) and a maximum collector-emitter breakdown voltage of 45V, the MSB1218A-RT1G is designed to handle high-voltage and high-temperature environments. The device is surface-mountable, making it ideal for compact and space-constrained designs.

MSB1218A-RT1G Features

  • Operating Temperature: 150°C (TJ) - suitable for high-temperature applications
  • Current - Collector (Ic) (Max): 100 mA - capable of handling high current loads
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA - ensures low power consumption
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V - provides high gain and improved signal amplification
  • Power - Max: 150 mW - suitable for low-power applications
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - resistant to moisture and humidity
  • RoHS Status: ROHS3 Compliant - environmentally friendly and compliant with RoHS regulations
  • REACH Status: REACH Unaffected - compliant with REACH regulations

MSB1218A-RT1G Applications

The MSB1218A-RT1G is ideal for various applications due to its high-performance characteristics and robust design. Some specific use cases include:

  1. Automotive Electronics: The high-temperature and high-voltage capabilities make it suitable for automotive applications such as engine control modules and powertrain systems.
  2. Industrial Control Systems: The device's ability to handle high current loads and high temperatures makes it ideal for use in industrial control systems and power electronics.
  3. Telecommunications: The MSB1218A-RT1G can be used in telecommunications equipment for signal amplification and switching applications.
  4. Consumer Electronics: The device's compact size and surface-mountability make it suitable for use in consumer electronics such as smartphones, tablets, and laptops.

Conclusion of MSB1218A-RT1G

The MSB1218A-RT1G is a high-performance PNP single bipolar transistor that offers excellent electrical characteristics and robust performance. Its high-temperature and high-voltage capabilities, combined with its compact size and surface-mountability, make it an ideal choice for a wide range of applications, including automotive electronics, industrial control systems, telecommunications, and consumer electronics. With its unique features and advantages over similar models, the MSB1218A-RT1G is a reliable and efficient solution for your electronic design needs.

FAQ

What package or case is MSB1218A-RT1G available in?
MSB1218A-RT1G is available in the 3000 package / case.
What is MSB1218A-RT1G?
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What operating temperature range does MSB1218A-RT1G support?
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