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MSB92AWT1G  

Single Bipolar Transistors

The MSB92AWT1G is a high-performance gallium nitride (GaN) power transistor offered by ON Semiconductor. This device is designed for use in a wide range of applications, including power management, motor control, and RF power amplification.

Description:

The MSB92AWT1G is a normally-off GaN transistor that features a high electron mobility transistor (HEMT) structure. It is designed to operate at high voltages and currents, making it suitable for use in high-power applications. The device is available in a 1G (1x1 inch) package, which provides excellent thermal performance and allows for efficient heat dissipation.

Features:

Some of the key features of the MSB92AWT1G include:

1. High voltage and current capability: The device can handle high voltages and currents, making it suitable for use in power management and motor control applications.
2. High efficiency: The GaN technology used in the MSB92AWT1G offers high efficiency and low power loss, which can help to reduce the overall power consumption of a system.
3. Fast switching: The device has a fast switching time, which can help to improve the performance of high-frequency applications.
4. High thermal stability: The 1G package provides excellent thermal performance, which can help to ensure the reliability and longevity of the device.
5. Robust protection features: The MSB92AWT1G includes built-in protection features such as overvoltage protection and overcurrent protection, which can help to protect the device from damage in the event of a fault.

Applications:

The MSB92AWT1G is suitable for use in a wide range of applications, including:

1. Power management: The device can be used in power management applications such as DC-DC converters, AC-DC converters, and power supplies.
2. Motor control: The high current and voltage capabilities of the MSB92AWT1G make it well-suited for use in motor control applications such as brushless DC motor controllers and induction motor controllers.
3. RF power amplification: The high-frequency performance and fast switching capabilities of the device make it suitable for use in RF power amplification applications such as base stations and radio transmitters.
4. Renewable energy: The MSB92AWT1G can be used in renewable energy applications such as solar inverters and wind turbine converters.

Overall, the MSB92AWT1G is a high-performance GaN power transistor that offers excellent efficiency, fast switching, and robust protection features. Its high voltage and current capabilities make it suitable for use in a wide range of applications, including power management, motor control, and RF power amplification.

MSB92AWT1G Documents

Download datasheets and manufacturer documentation for MSB92AWT1G

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