German
Japanese
Portuguese
Korea
Mexico
Dutch
onsemi
MUN5116DW1T1G
293-MUN5116DW1T1G
PDF Datasheet
Dual PNP BJT Transistor, 50V, 100mA, SOT-363-6
8 Weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-100mA
Current Rating
-100mA
Halogen Free
Halogen Free
Height
0.9mm
MUN5116DW1T1G Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
FAQ
What package or case is MUN5116DW1T1G available in?
MUN5116DW1T1G is available in the SOT-363-6 package / case.
What voltage specification is listed for MUN5116DW1T1G?
What is the standard lead time for MUN5116DW1T1G?
What is MUN5116DW1T1G?
Is MUN5116DW1T1G currently in stock?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
