onsemi_MUN5212DW1T1G
original

onsemi
MUN5212DW1T1G

293-MUN5212DW1T1G
PDF Datasheet
Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
6 Weeks

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Tech Specifications

Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
Halogen Free
Halogen Free
hFE Min
60
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MUN5212DW1T1G Description

MUN5212DW1T1G Description

The MUN5212DW1T1G is a Bipolar Transistor Array from onsemi, designed for high-performance applications. This pre-biased 2NPN transistor array offers a max collector current of 100mA, making it suitable for a wide range of electronic devices. With a max Vce saturation of 250mV at 300µA and 10mA, it ensures efficient power management. The device is surface mount, allowing for compact and reliable integration into various systems.

MUN5212DW1T1G Features

  • Technical Specifications:

    • Max Collector Current (Ic): 100mA
    • Base Resistor (R1): 22kOhms
    • Emitter Base Resistor (R2): 22kOhms
    • Max Vce Saturation: 250mV @ 300µA, 10mA
    • Max Voltage - Collector Emitter Breakdown: 50V
    • Max Power: 250mW
    • Max Collector Cutoff Current: 500nA
    • DC Current Gain (hFE) Min: 60 @ 5mA, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Pre-biased design for simplified circuitry and reduced design complexity
    • Surface mount for compact integration
    • Low Vce saturation for efficient power management
    • Wide operating temperature range for versatile applications
  • Unique Advantages:

    • Active product status, ensuring ongoing support and availability
    • REACH unaffected, complying with environmental regulations
    • ROHS3 compliant, adhering to strict environmental standards

MUN5212DW1T1G Applications

The MUN5212DW1T1G is ideal for various applications where high performance and reliability are crucial:

  • Automotive Electronics: Utilized in power management systems and control units for efficient energy utilization.
  • Industrial Control Systems: Employed in motor control and signal processing applications for robust operation.
  • Consumer Electronics: Integrated into audio amplifiers and power supplies for high-quality performance.
  • Telecommunications: Used in signal amplification and processing for reliable communication.

Conclusion of MUN5212DW1T1G

The MUN5212DW1T1G is a versatile and high-performance Bipolar Transistor Array from onsemi. Its pre-biased design, low Vce saturation, and compact surface mount packaging make it an excellent choice for a wide range of applications in automotive, industrial, consumer, and telecommunications sectors. With its ongoing support and compliance with environmental standards, the MUN5212DW1T1G is a reliable solution for your electronic design needs.

FAQ

What operating temperature range does MUN5212DW1T1G support?
MUN5212DW1T1G has an operating temperature range of 150°C.
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