onsemi

MUN5232DW1T1G

MUN5232DW1T1G Description

The MUN5232DW1T1G is a Bipolar Transistor Array from onsemi, designed for pre-biased applications. It features two NPN transistors in a SOT363 package, offering high performance and reliability in various electronic circuits. With a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V, this device is suitable for a wide range of applications. The MUN5232DW1T1G is RoHS compliant, REACH unaffected, and has a moisture sensitivity level of 1, making it suitable for use in various environments.

MUN5232DW1T1G Features

• Bipolar Transistor Array with two NPN transistors
• Surface Mount packaging (SOT363)
• Maximum collector current (Ic) of 100mA
• Collector-emitter breakdown voltage (Vce) of 50V
• Maximum power dissipation of 250mW
• DC current gain (hFE) of 15 at 5mA, 10V
• Pre-biased with internal resistors (R1 = 4.7kOhms, R2 = 4.7kOhms)
• Vce saturation (Max) of 250mV at 1mA, 10mA
• Maximum collector cutoff current of 500nA
• RoHS compliant (ROHS3)
• REACH unaffected
• Moisture sensitivity level (MSL) of 1 (Unlimited)

MUN5232DW1T1G Applications

The MUN5232DW1T1G is ideal for various applications where pre-biased transistor arrays are required. Some specific use cases include:

1. Audio amplifiers and preamplifiers
2. Low-power switching circuits
3. Signal conditioning and processing circuits
4. Battery management systems
5. Consumer electronics, such as smartphones and wearable devices

Conclusion of MUN5232DW1T1G

The MUN5232DW1T1G is a versatile and reliable Bipolar Transistor Array from onsemi, offering excellent performance and ease of use in pre-biased applications. Its unique features, such as pre-biased internal resistors and a compact SOT363 package, make it an ideal choice for a wide range of electronic circuits. With its high collector current, low saturation voltage, and RoHS compliance, the MUN5232DW1T1G is a valuable component for designers looking to optimize their circuits for performance and reliability.