onsemi_MUN5314DW1T1G
original

onsemi
MUN5314DW1T1G

293-MUN5314DW1T1G
PDF Datasheet
NPN/PNP Digital Transistor, 50V, 100mA, SOT-363-6
10 Weeks

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Tech Specifications

Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
Height
0.9mm
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MUN5314DW1T1G Description

MUN5314DW1T1G Description

The MUN5314DW1T1G is a Bipolar Transistor Array from onsemi, featuring a 1NPN and 1PNP configuration with a 50V collector-emitter breakdown voltage. This pre-biased device is designed for surface mount applications and offers a range of performance benefits, making it suitable for various electronic systems.

MUN5314DW1T1G Features

  • Technical Specifications:

    • Maximum collector current (Ic): 100mA
    • Base resistor (R1): 10kOhms
    • Emitter-base resistor (R2): 47kOhms
    • Vce saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Maximum power dissipation: 250mW
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • RoHS Compliance: ROHS3 Compliant
    • REACH Status: REACH Unaffected
    • ECCN: EAR99
    • HTSUS: 8541.21.0095
  • Performance Benefits:

    • DC current gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Maximum collector cutoff current: 500nA
    • Tape & Reel (TR) packaging for efficient handling and automation
  • Unique Features and Advantages:

    • Pre-biased design simplifies circuit design and reduces external component requirements
    • Surface mount technology for compact and reliable integration in densely populated PCBs
    • Wide operating voltage range (up to 50V) for versatile applications

MUN5314DW1T1G Applications

The MUN5314DW1T1G is ideal for applications that require a compact, pre-biased transistor solution with low power consumption and high reliability. Some specific use cases include:

  • Audio Amplifiers: Utilize the pre-biased design for simplified biasing in audio circuits
  • Power Management: Employ the device in power control circuits for efficient power distribution
  • Signal Processing: Use the device in signal conditioning circuits for accurate signal amplification and processing

Conclusion of MUN5314DW1T1G

The MUN5314DW1T1G from onsemi is a versatile Bipolar Transistor Array that offers a pre-biased design, low power consumption, and a wide operating voltage range. Its unique features, such as surface mount technology and RoHS compliance, make it an ideal choice for a variety of electronic applications, including audio amplifiers, power management, and signal processing. With its robust performance and compact form factor, the MUN5314DW1T1G is a reliable solution for designers looking to optimize their circuit designs.

FAQ

What is the standard lead time for MUN5314DW1T1G?
The standard lead time for MUN5314DW1T1G is 10 Weeks.
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