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MUN5316DW1T1G
293-MUN5316DW1T1G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
7 Weeks
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Tech Specifications
Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
hFE Min
160
Lead Free
Lead Free
MUN5316DW1T1G Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
FAQ
What package or case is MUN5316DW1T1G available in?
MUN5316DW1T1G is available in the SOT-363-6 package / case.
Does MUN5316DW1T1G have quantity-based pricing?
What operating temperature range does MUN5316DW1T1G support?
What is the standard lead time for MUN5316DW1T1G?
What is MUN5316DW1T1G?
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