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onsemi
MUN5316DW1T1G
293-MUN5316DW1T1G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
7 Weeks
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Tech Specifications
Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
hFE Min
160
Lead Free
Lead Free
MUN5316DW1T1G Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
FAQ
What is MUN5316DW1T1G?
MUN5316DW1T1G is a Bipolar Transistor Arrays, Pre-Biased from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
What is the standard lead time for MUN5316DW1T1G?
What package or case is MUN5316DW1T1G available in?
What voltage specification is listed for MUN5316DW1T1G?
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