onsemi_MUN5333DW1T1G
original

onsemi
MUN5333DW1T1G

293-MUN5333DW1T1G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
9 Weeks

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Tech Specifications

Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
hFE Min
80
Lead Free
Lead Free
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MUN5333DW1T1G Description

MUN5333DW1T1G Description

The MUN5333DW1T1G is a Bipolar Transistor Array, Pre-Biased, manufactured by onsemi. This device features a 1NPN and 1PNP configuration with a 50V collector-emitter breakdown voltage. The MUN5333DW1T1G is designed for surface mount applications and is packaged in a tape & reel (TR) format.

MUN5333DW1T1G Features

  • Technical Specifications:

    • Maximum collector current (Ic): 100mA
    • Base resistor (R1): 4.7kOhms
    • Emitter resistor (R2): 47kOhms
    • Vce saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
    • Maximum power dissipation: 250mW
    • DC current gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Maximum collector cutoff current: 500nA
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • High current gain and low saturation voltage for efficient operation
    • Low collector cutoff current for minimal power consumption in standby mode
    • Moisture sensitivity level 1 for reliable performance in various environments
  • Unique Features and Advantages:

    • Pre-biased configuration simplifies design and reduces external component requirements
    • Surface mount packaging for compact and efficient PCB layouts
    • Active product status and REACH unaffected, ensuring ongoing availability and compliance

MUN5333DW1T1G Applications

The MUN5333DW1T1G is ideal for various applications where a pre-biased NPN and PNP transistor pair is required. Some specific use cases include:

  1. Audio Amplifiers: The high current gain and low saturation voltage make it suitable for audio amplification applications.
  2. Power Management: The device's low collector cutoff current and high current gain make it suitable for power management circuits.
  3. Signal Processing: The MUN5333DW1T1G can be used in signal processing applications where a pre-biased NPN and PNP transistor pair is needed.
  4. Automotive Electronics: The device's reliability and performance make it suitable for automotive electronic systems.

Conclusion of MUN5333DW1T1G

The MUN5333DW1T1G is a versatile Bipolar Transistor Array, Pre-Biased, offering high performance and reliability in a compact surface mount package. Its unique features, such as the pre-biased configuration and low saturation voltage, make it an ideal choice for various applications, including audio amplifiers, power management, signal processing, and automotive electronics. The MUN5333DW1T1G's ongoing availability and REACH unaffected status ensure that it remains a viable option for designers in the electronics industry.

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Yes. MUN5333DW1T1G currently shows 35590 unit(s) in stock.
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